Atomic composition and stability of Langmuir-Blodgett monolayers based on siloxane dimer of quaterthiophene on the surface of polycrystalline gold

被引：3

作者：

Komolov, A. S. ^{[1
]}

Lazneva, E. F. ^{[1
]}

Zhukov, Yu. M. ^{[1
]}

Pshenichnyuk, S. A. ^{[1
,2
]}

Agina, E. V. ^{[3
]}

Dominskii, D. I. ^{[4
]}

Anisimov, D. S. ^{[4
]}

Parashchuk, D. Yu. ^{[4
]}

机构：

[1] St Petersburg State Univ, St Petersburg 198504, Russia

[2] Russian Acad Sci, Inst Mol & Crystal Phys, Ufa Res Ctr, Ufa 450075, Bashkortostan, Russia

[3] Russian Acad Sci, Enikolopov Inst Synthet Polymer Mat, Moscow 117393, Russia

[4] Moscow MV Lomonosov State Univ, Dept Phys, Ctr Int Laser, Moscow 119899, Russia

来源：

PHYSICS OF THE SOLID STATE | 2017年 / 59卷 / 12期

基金：

俄罗斯基础研究基金会; 俄罗斯科学基金会;

关键词：

FIELD-EFFECT TRANSISTORS; UNOCCUPIED ELECTRONIC STATES; THIN-FILM TRANSISTORS; DEGRADATION PROCESSES; MOLECULAR-STRUCTURE; GRAPHENE; SPECTROSCOPY; SILICON; DERIVATIVES; MICROSCOPY;

D O I：

10.1134/S1063783417120228

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

Atomic composition of monolayers based on siloxane dimer of quaterthiophene deposited by Langmuir-Blodgett technique on a silicon dioxide surface partially covered by gold film and the stability of these monolayers upon surface treatment by Ar+ ions bombardment have been studied. Experimental results for the chemical composition of a series of studied surfaces have been obtained by X-ray photoelectron spectroscopy (XPS) by recording XPS spectra of C 1s, O 1s, S 2p, and Au 4f core levels. The relative concentration of Au and Si substrate atoms and the composition of ex situ prepared surface under study were determined within 10-15%, which indicates that Langmuir-Blodgett monolayers based on siloxane dimer of quaterthiophene form continuous coating in a considerable extent. Prior to the treatment of the studied surface by Ar+ ions bombardment, carbon- and oxygen-containing surface adsorbates provided a considerable contribution to the results of XPS measurements. The surface cleaning by Ar+ ions with energy 3 keV at electric current through sample of similar to 1 mu A in several 30-s steps has led to the etching of surface adsorbates and next Langmuir-Blodgett films of the siloxane dimer of quaterthiophene.

引用

页码：2491 / 2496

页数：6

共 26 条

[1] Intercalation of graphene on iridium with samarium atoms [J].

Afanas'eva, E. Yu. ;

Rut'kov, E. V. ;

Gall, N. R. .

PHYSICS OF THE SOLID STATE, 2016, 58 (07) :1463-1468

[2] Thiophene-based monolayer OFETs prepared by Langmuir techniques [J].

Agina, Elena V. ;

Sizov, Alexey S. ;

Anisimov, Daniil S. ;

Trul, Askold A. ;

Borshchev, Oleg V. ;

Paraschuk, Dmitry Yu. ;

Shcherbina, Maxim A. ;

Chvalun, Sergey N. ;

Ponomarenko, Sergey A. .

ORGANIC FIELD-EFFECT TRANSISTORS XIV; AND ORGANIC SENSORS AND BIOELECTRONICS VIII, 2015, 9568

[3] Formation of Self-Assembled Organosilicon-Functionalized Quinquethiophene Monolayers by Fast Processing Techniques [J].

Agina, Elena V. ;

Usov, Ivan A. ;

Borshchev, Oleg V. ;

Wang, Jingbo ;

Mourran, Ahmed ;

Shcherbina, Maxim A. ;

Bakirov, Artem V. ;

Grigorian, Souren ;

Moeller, Martin ;

Chvalun, Sergei N. ;

Ponomarenko, Sergei A. .

LANGMUIR, 2012, 28 (46) :16186-16195

[4] Investigation of the structure, elemental and phase compositions of Fe3O4-SiO2 composite layers by scanning electron microscopy, X-ray spectroscopy, and thermal nitrogen desorption methods [J].

Al'myashev, V. I. ;

Gareev, K. G. ;

Ionin, S. A. ;

Levitskii, V. S. ;

Moshnikov, V. A. ;

Terukov, E. I. .

PHYSICS OF THE SOLID STATE, 2014, 56 (11) :2155-2159

[5] Poly(9-vinylcarbazole)-graphene oxide composite field-effect transistors with enhanced mobility [J].

Aleshin, Andrey N. ;

Shcherbakov, Igor P. ;

Komolov, Alexei S. ;

Petrov, Vasily N. ;

Trapeznikova, Irina N. .

ORGANIC ELECTRONICS, 2015, 16 :186-194

[6] Effect of Molecular Structure of α,α′-Dialkylquaterthiophenes and Their Organosilicon Multipods on Ordering, Phase Behavior, and Charge Carrier Mobility [J].

Anokhin, Denis. V. ;

Defaux, Matthieu ;

Mourran, Ahmed ;

Moeller, Martin ;

Luponosov, Yury N. ;

Borshchev, Oleg V. ;

Bakirov, Artem V. ;

Shcherbina, Maxim A. ;

Chvalun, Sergei N. ;

Meyer-Friedrichsen, Timo ;

Elschner, Andreas ;

Kirchmeyer, Stephan ;

Ponomarenko, Sergei A. ;

Ivanov, Dmitri A. .

JOURNAL OF PHYSICAL CHEMISTRY C, 2012, 116 (43) :22727-22736

[7] Synthesis of organosilicon derivatives of [1]benzothieno[3,2-b][1]-benzothiophene for efficient monolayer Langmuir-Blodgett organic field effect transistors [J].

Borshchev, O. V. ;

Sizov, A. S. ;

Agina, E. V. ;

Bessonov, A. A. ;

Ponomarenko, S. A. .

CHEMICAL COMMUNICATIONS, 2017, 53 (05) :885-888

[8] Self-Assembled Organic Semiconductors for Monolayer Field-Effect Transistors [J].

Borshchev, O. V. ;

Ponomarenko, S. A. .

POLYMER SCIENCE SERIES C, 2014, 56 (01) :32-46

[9] Energy-Level Alignment at Organic/Metal and Organic/Organic Interfaces [J].

Braun, Slawomir ;

Salaneck, William R. ;

Fahlman, Mats .

ADVANCED MATERIALS, 2009, 21 (14-15) :1450-1472

[10] Structural and chemical characterization of vapor-deposited polythiophene films [J].

Dillingham, TR ;

Cornelison, DM ;

Townsend, SW .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1996, 14 (03) :1494-1498

← 1 2 3 →