Phonons and Phonon Thermal Conductivity in Silicon Nano layers

被引:8
作者
Cocemasov, Alexandr I. [1 ]
Nika, Denis L. [1 ]
机构
[1] Moldova State Univ, Dept Theoret Phys, E Pokatilov Lab Phys & Engn Nanomat, MD-2009 Kishinev, Moldova
关键词
Thermal Conductivity; Phonons; Nanolayer; Born-von Karman Model; A-SPECIAL-ISSUE; HETEROSTRUCTURES; CONFINEMENT; SCATTERING; TRANSPORT; ELECTRON; DIAMOND; MODEL;
D O I
10.1166/jno.2012.1313
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We developed a three-parameter Born-von Karman type model of lattice dynamics for nanolayers with diamond crystal lattice. In the framework of this model we theoretically investigated the phonon energy spectra and in-plane thermal conductivity of nanometer-thick silicon nanolayers taking into account two-dimensional density of phonon states and phonon modes quantization. We demonstrated that optical phonons practically do not participate in the heat transport in the considered nanolayers and their contribution to the thermal conductivity constitutes only a few percent. We compared our results with those obtained using the Face-Centered Cubic Cell model of lattice dynamics and found that both models give qualitatively similar results. The calculated temperature dependences of the phonon thermal conductivity are found in a good agreement with available experimental data for 20-nm-thick and 30-nm-thick silicon nanolayers. The proposed theoretical model can be useful for description of the quantized phonon modes and thermal conductivity in the nanolayers or nanowires embedded in the coating layers with different acoustic properties.
引用
收藏
页码:370 / 375
页数:6
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