Role of top nitride layer on stability and leakage current in a-Si:H thin film transistors

被引：0

作者：

Murthy, RVR ^{[1
]}

Ma, Q ^{[1
]}

Nathan, A ^{[1
]}

Chamberlain, SG ^{[1
]}

机构：

[1] Univ Waterloo, Dept Elect & Comp Engn, Waterloo, ON N2L 3G1, Canada

来源：

PROCEEDINGS OF THE FOURTH SYMPOSIUM ON THIN FILM TRANSISTOR TECHNOLOGIES | 1999年 / 98卷 / 22期

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D O I：

暂无

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

In this paper, we discuss the role of top (passivation) nitride layer on stability and leakage current characteristics in inverted staggered hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs). Here, He varied the ammonia (NN3) to silane (SiH4) gas ratio (R = NH3/SiH4) of the top nitride layer from 5 to 25 for a fixed composition of the (nitrogen-rich) gate nitride. When stressed with a prolonged gate bias, the observed shift in both threshold voltage (V-T) and leakage current was largest in samples where the gas ratio was small (R = 5). This behavior can be attributed to injection of energetic carriers from the a-Si:PI and their subsequent trapping in the top a-SiNx:H layer which can be minimized by use of nitrogen-rich top nitride (R = 25).

引用

页码：230 / 236

页数：7

共 8 条

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