All-optical NAND logic device operating at 1.51-1.55μm in Er-doped aluminosilicate glass

被引：14

作者：

Maeda, Y ^{[1
]}

机构：

[1] Toyota Technol Inst, Dept Informat & Control Engn, Tempa Ku, Nagoya, Aichi 4688511, Japan

来源：

ELECTRONICS LETTERS | 1999年 / 35卷 / 07期

关键词：

D O I：

10.1049/el:19990397

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

An all-optical NAND logic device derived from the negative nonlinear absorption effect has been demonstrated in erbium-doped aluminosilicate glass using 1510-1550 nm laser diodes. The reversed-phase transmitted waveforms were observed at modulation frequencies from 0.2kHz to 1.0GHz. The device has a novel possibility for expanding the capacity of optical networks and computers.

引用

页码：582 / 584

页数：3