All-optical NAND logic device operating at 1.51-1.55μm in Er-doped aluminosilicate glass

被引：14
|
作者：
Maeda, Y [1 ]
机构：
[1] Toyota Technol Inst, Dept Informat & Control Engn, Tempa Ku, Nagoya, Aichi 4688511, Japan
来源：
ELECTRONICS LETTERS | 1999年 / 35卷 / 07期
关键词：
D O I：
10.1049/el:19990397
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
An all-optical NAND logic device derived from the negative nonlinear absorption effect has been demonstrated in erbium-doped aluminosilicate glass using 1510-1550 nm laser diodes. The reversed-phase transmitted waveforms were observed at modulation frequencies from 0.2kHz to 1.0GHz. The device has a novel possibility for expanding the capacity of optical networks and computers.
引用
收藏
页码：582 / 584
页数：3
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