Electrostatic grafting of diamond nanoparticles towards 3D diamond nanostructures

被引：17

作者：

Girard, H. A. ^{[1
]}

Scorsone, E. ^{[1
]}

Saada, S. ^{[1
]}

Gesset, C. ^{[1
]}

Arnault, J. C. ^{[1
]}

Perruchas, S. ^{[2
]}

Rousseau, L. ^{[3
]}

David, S. ^{[4
]}

Pichot, V. ^{[5
]}

Spitzer, D. ^{[5
]}

Bergonzo, P. ^{[1
]}

机构：

[1] CEA, LIST, Diamond Sensors Lab, F-91191 Gif Sur Yvette, France

[2] Ecole Polytech, CNRS, Lab Phys Matiere Condensee, F-91128 Palaiseau, France

[3] Univ Paris Est, ESIEE, ESYCOM, F-93162 Noisy Le Grand, France

[4] Univ Paris 11, Inst Elect Fondamentale, Cent Technol Univ, F-91405 Orsay, France

[5] Inst Francoallemand Rech St Louis ISL, CNRS, NS3E, ISL,UMR 3208, F-68301 St Louis, France

来源：

关键词：

Diamond nanoparticles; Layer by layer; Electrostatic grafting; 3D diamond growth; FABRICATION; NANOWIRES; NUCLEATION; CRYSTAL;

D O I：

10.1016/j.diamond.2012.01.021

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Nanodiamond seeding toward CVD (chemical vapor deposition) synthesis of diamond layers has received growing interest during the last decade. Several methods are now available to disperse highly dense and compact nanodiamond deposits on a substrate, enabling the growth of ultrathin diamond layers with thickness below 70 nm. While these approaches are extremely efficient to deposit nanodiamonds on plane substrates, even on large areas, a limitation still persists for 3D structured substrates. Here, we report on a technique to disperse nanodiamonds on nanometric patterns, allowing the manufacture of diamond nanostructures by a bottom-up approach, such as diamond coated silicon nanodevices or high aspect ratio diamond tips. (C) 2012 Elsevier B.V. All rights reserved.

引用

页码：83 / 87

页数：5

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