The Effect of Interface States Density Distribution and Series Resistance on Electrical Behaviour of Schottky Diode

被引：15

作者：

Dhimmar, J. M. ^{[1
]}

Desai, H. N. ^{[1
]}

Modi, B. P. ^{[1
]}

机构：

[1] Veer Narmad South Gujarat Univ, Dept Phys, Surat 395007, India

来源：

MATERIALS TODAY-PROCEEDINGS | 2016年 / 3卷 / 06期

关键词：

Series resistance; barrier height; interface states; insulating layer; V CHARACTERISTICS; CURRENT-VOLTAGE; BARRIER HEIGHT; CHARACTERISTIC PARAMETERS; TEMPERATURE-DEPENDENCE; CAPACITANCE-VOLTAGE; C-V; CONTACTS; EXTRACTION; LAYER;

D O I：

10.1016/j.matpr.2016.04.056

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The forward and reverse bias current-voltage characteristics of the In/p-Si Schottky barrier diode (SBD) have been investigated in the temperature range of 360K to 120K. The current-voltage measurements have been used to extract the electrical parameters such as series resistance, barrier height, ideality factor and interface states density distribution. The higher values of series resistance, ideality factor and interface states energy distribution at low temperature was attributed to the presence of an interfacial insulated layer, popularly known as metal-insulator-semiconductor (MIS) devices. The temperature dependence energy distribution profile of interface states was obtained from the forward bias I-V-T measurements by taking into account the bias dependence of the effective barrier height and ideality factor. The interface states density (NSS) decreased with increasing temperature was explained by the result of atomic restructuring and reordering at the metal semiconductor interface. (C) 2015 Elsevier Ltd. All rights reserved.

引用

页码：1658 / 1665

页数：8

共 35 条

[1]

Aboelfotho M. O., 1987, PHYS REV B, V35, P6298

[2] Temperature dependent electrical characteristics of Sn/p-Si Schottky diodes [J].

Ayyildiz, E ;

Cetin, H ;

Horváth, ZJ .

APPLIED SURFACE SCIENCE, 2005, 252 (04) :1153-1158

[3]

Ayyildiz E., 2006, J ELECT MAT, V31, P6

[4] The effect of anodic oxide treatment on n-GaAs Schottky barrier diodes [J].

Biber, M ;

Çakar, M ;

Türüt, A .

JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2001, 12 (10) :575-579

[5] STUDIES OF TUNNEL MOS DIODES .1. INTERFACE EFFECTS IN SILICON SCHOTTKY DIODES [J].

CARD, HC ;

RHODERICK, EH .

JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1971, 4 (10) :1589-+

[6] Extraction of interface state density of Pt/p-strained-Si Schottky diode [J].

Chattopadhyay, S ;

Bera, LK ;

Ray, SK ;

Bose, PK ;

Maiti, CK .

THIN SOLID FILMS, 1998, 335 (1-2) :142-145

[7] EXTRACTION OF SCHOTTKY DIODE PARAMETERS FROM FORWARD CURRENT-VOLTAGE CHARACTERISTICS [J].

CHEUNG, SK ;

CHEUNG, NW .

APPLIED PHYSICS LETTERS, 1986, 49 (02) :85-87

[8] BARRIER HEIGHT VARIATION IN AL/GAAS SCHOTTKY DIODES WITH A THIN SILICON INTERFACIAL LAYER [J].

COSTA, JC ;

WILLIAMSON, F ;

MILLER, TJ ;

BEYZAVI, K ;

NATHAN, MI ;

MUI, DSL ;

STRITE, S ;

MORKOC, H .

APPLIED PHYSICS LETTERS, 1991, 58 (04) :382-384

[9] TEMPERATURE-DEPENDENCE OF IV AND C-V CHARACTERISTICS OF NI/N-CDF2 SCHOTTKY-BARRIER TYPE DIODES [J].

COVA, P ;

SINGH, A .

SOLID-STATE ELECTRONICS, 1990, 33 (01) :11-19

[10] Effect of series resistance and interface states on the I-V, C-V and G/ω-V characteristics in Au/Bi-doped polyvinyl alcohol (PVA)/n-Si Schottky barrier diodes at room temperature [J].

Demirezen, S. ;

Sonmez, Z. ;

Aydemir, U. ;

Altindal, S. .

CURRENT APPLIED PHYSICS, 2012, 12 (01) :266-272

← 1 2 3 4 →