Surfactant effects of atomic hydrogen on low-temperature growth of InAs on InP

We have investigated the initial stage of InAs grown on InP at low temperature with atomic hydrogen (H). At 350 degrees C, the critical layer thickness (CLT), above which lattice relaxation begins to start, increases from 30 to 46 Angstrom by atomic H supply during growth. When the growth temperature is lowered to 250 degrees C, the CLT increases to above 100 Angstrom with atomic H (with-H), while only small change in the CLT appears without atomic H condition (without-H). The lattice relaxation process with-H is delayed significantly and the oscillation of the specular beam intensity of reflection high-energy electron diffraction persists for longer time than without-H. These results indicate that atomic H has beneficial effects on the considerable increase in the CLT and the formation of flat surface.