A low-power 72.8-GHz static frequency divider in AlInAs/InGaAs HBT technology

被引:30
作者
Sokolich, M [1 ]
Fields, CH [1 ]
Thomas, S [1 ]
Shi, BQ [1 ]
Boegeman, YK [1 ]
Montes, M [1 ]
Martinez, R [1 ]
Kramer, AR [1 ]
Madhav, M [1 ]
机构
[1] HRL Labs LLC, Malibu, CA 90265 USA
关键词
compound semiconductors; frequency conversion; heterojunction bipolar transistors; high-speed integrated circuits; indium compounds; logic circuit testing; millimeter-wave bipolar transistor; semiconductor device modeling;
D O I
10.1109/4.944659
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We report a 72.8-GHz fully static frequency divider in AlInAs/InGaAs BET IC technology. The CML divider operates with a 350-mV logic swing at less than 0-dBrn input power up to a maximum clock rate of 63 GHz and requires 8.6 dBm of input power at the maximum clock rate of 72.8 GHz. Power dissipation per flip-flop is 55 mW with a 3.1-V power supply. To our knowledge, this is the highest frequency of operation for a static divider in any technology. The power-delay product of 94 fJ/gate is the lowest power-delay product for a circuit operating above 50 GHz in any technology. A low-power divider on the same substrate operates at 36 GHz with 6.9 mW of dissipated power per flip-flop with a 3.1-V supply. The power delay of 24 fJ/gate is, to our knowledge, the lowest power-delay product for a static divider operating above 30 GHz in any technology. We briefly review the requirements for benchmarking a logic family and examine the historical trend of maximum clock rate in high-speed circuit technology.
引用
收藏
页码:1328 / 1334
页数:7
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