A 28-GHz 20.4-dBm CMOS Power Amplifier with Adaptive Common-Gate Cross Feedback Linearization

被引:2
作者
Yoo, Jongho [1 ]
Hong, Songcheol [1 ]
机构
[1] Korea Adv Inst Sci & Technol, Wave Embedded Syst Lab, Daejeon, South Korea
来源
2021 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS) | 2021年
关键词
power amplifiers; mm-wave; beamforming; CMOS; 5G; mobile communication; Ka-band;
D O I
10.1109/IMS19712.2021.9575036
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A 28-GHz power amplifier (PA) with adaptive cross feedback (ACF) is presented. The ACF is employed by an adaptively controllable RC-feedback circuit from the source to the opposite drain nodes of the common-gate (CG) stages in a differential cascode amplifier. The proposed ACF makes the PA stable even with large power transistors. It also linearizes the PA by decreasing the feedback adaptively at high powers which improves amplitude distortion (AM-AM) and power-added efficiency (PAE) as well as the saturation power (P-Sat). The proposed PA is implemented with a 28-nm bulk CMOS process with a 0.144 um(2) core chip area. It is shown that the ACF increases P-Sat, peak PAE, and output 1-dB gain compression point (OP1dB) from 20.1 dBm to 20.4 dBm, 34% to 37.2%, and 17.4 dBm to 18.2 dBm, respectively at 28.5 GHz. The proposed PA shows a 28-dB peak gain at 28.6 GHz with 26.8 GHz to 30.8 GHz (14.0%) 3-dB gain bandwidth, which is the highest P-Sat and gain among the reported Ka-band bulk CMOS PAs.
引用
收藏
页码:438 / 441
页数:4
相关论文
共 7 条
[1]  
Ali SN, 2018, ISSCC DIG TECH PAP I, P406, DOI 10.1109/ISSCC.2018.8310356
[2]  
Park B., 2016, IEEE MTT S INT MICRO, P1
[3]   A 28-GHz 32-Element TRX Phased-Array IC With Concurrent Dual-Polarized Operation and Orthogonal Phase and Gain Control for 5G Communications [J].
Sadhu, Bodhisatwa ;
Tousi, Yahya ;
Hallin, Joakim ;
Sahl, Stefan ;
Reynolds, Scott K. ;
Renstrom, Orjan ;
Sjogren, Kristoffer ;
Haapalahti, Olov ;
Mazor, Nadav ;
Bokinge, Bo ;
Weibull, Gustaf ;
Bengtsson, Hakan ;
Carlinger, Anders ;
Westesson, Eric ;
Thillberg, Jan-Erik ;
Rexberg, Leonard ;
Yeck, Mark ;
Gu, Xiaoxiong ;
Ferriss, Mark ;
Liu, Duixian ;
Friedman, Daniel ;
Valdes-Garcia, Alberto .
IEEE JOURNAL OF SOLID-STATE CIRCUITS, 2017, 52 (12) :3373-3391
[4]  
Shakib S, 2016, ISSCC DIG TECH PAP I, V59, P352, DOI 10.1109/ISSCC.2016.7418052
[5]   A 19.1% PAE, 22.4-dBm 53-GHz Parallel Power Combining Power Amplifier with Stacked-FET Techniques in 90-nm CMOS [J].
Sun, Wei-Che ;
Kuo, Chien-Nan .
2019 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM (IMS), 2019, :327-330
[6]   A 60 GHz Drain-Source Neutralized Wideband Linear Power Amplifier in 28 nm CMOS [J].
Thyagarajan, Siva V. ;
Niknejad, Ali M. ;
Hull, Christopher D. .
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS I-REGULAR PAPERS, 2014, 61 (08) :2253-2262
[7]  
Zhang Y, 2017, IEEE RAD FREQ INTEGR, P33, DOI [10.1109/RFIC.2017.7969010, 10.1109/rfic.2017.7969010]