Metals-contamination-reduction program for the Varian EHP-220/500 medium-current ion implanter

被引:0
作者
Swenson, DR
Downey, DF
Walther, SR
Renau, A
Gammel, G
Mack, ME
机构
来源
ION IMPLANTATION TECHNOLOGY - 96 | 1997年
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中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
The results of a program to minimize metals contamination for the Varian EHP-220/500 medium-current ion implanter are presented. Additional graphite and Si-coated shields were added to the beamline and metal contamination associated with 80-kV As+ implants was measured by SIMS. Total contamination (surface + energetic) was reduced to as low as 28 ppm for Al, 3 ppm for Fe and 2 ppm for Cr. Energetic components of the contamination are consistent with models of knock-on distributions from an 80 kV As+ implant.
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页码:139 / 142
页数:4
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