Advantages of SixSb2Te phase-change material and its applications in phase-change random access memory

被引：21

作者：

Gu, Yifeng ^{[1
,2
]}

Cheng, Yan ^{[1
]}

Song, Sannian ^{[1
]}

Zhang, Ting ^{[1
]}

Song, Zhitang ^{[1
]}

Liu, Xuyan ^{[1
]}

Du, Xiaofeng ^{[1
]}

Liu, Bo ^{[1
]}

Feng, Songlin ^{[1
]}

机构：

[1] Chinese Acad Sci, Shanghai Inst Microsyst & Informat Technol, State Key Lab Funct Mat Informat, Shanghai 200050, Peoples R China

[2] Chinese Acad Sci, Grad Sch, Beijing 100049, Peoples R China

来源：

SCRIPTA MATERIALIA | 2011年 / 65卷 / 07期

基金：

中国国家自然科学基金;

关键词：

Phase-change material; Phase-change memory; SixSb2Te; Ge2Sb2Te5; CRYSTALLIZATION; SB;

D O I：

10.1016/j.scriptamat.2011.06.045

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

Si-doped Sb2Te phase-change material was investigated for the application of phase-change memory. During the electrical test, Si0.53Sb2Te needs a lower phase-change operating voltage than Ge2Sb2Te5. For the storage of data for 10 years, Si0.53Sb2Te needs an annealing temperature that is about 24 degrees C higher than for Ge2Sb2Te5. Crystallization changes from being growth dominated to being nucleation dominated. X-ray diffraction patterns indicate that the polycrystalline SixSb2Te series has a delta-phase with a rhombohedral crystalline structure, similar to the pure Sb2Te. Crown Copyright (C) 2011 Published by Elsevier Ltd. on behalf of Acta Materialia Inc. All rights reserved.

引用

页码：622 / 625

页数：4

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