Effect of the Beryllium Acceptor Impurity upon the Optical Properties of Single-Crystal AlN

被引：8

作者：

Mokhov, E. N. ^{[1
]}

Rabchinskiy, M. K. ^{[1
]}

Nagalyuk, S. S. ^{[1
]}

Gafurov, M. R. ^{[2
]}

Kazarova, O. P. ^{[1
]}

机构：

[1] Ioffe Inst, St Petersburg 194021, Russia

[2] Kazan Volga Reg Fed Univ, Kazan 420008, Russia

来源：

SEMICONDUCTORS | 2020年 / 54卷 / 03期

基金：

俄罗斯基础研究基金会;

关键词：

AlN; Be impurity; diffusion; optical properties; LEVEL COLOR-CENTERS; SHALLOW DONORS; BULK ALN; ODMR; EPR;

D O I：

10.1134/S1063782620030148

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The influence of the high-temperature (T = 1880 degrees C) diffusion of beryllium ions on the properties of single-crystal aluminum nitride is studied. It is shown that the postgrowth doping of AlN with Be brings about the compensation of shallow Si donor centers uncontrollably incorporated into the AlN lattice during growth. It is established that the introduction of Be into the AlN lattice results in a reduction in the optical absorption of AlN in the visible and ultraviolet regions. The set of results is attributed to a shift of the Fermi level to the top of the valence band of AlN upon the introduction of the Be acceptor impurity.

引用

页码：278 / 281

页数：4

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