Study of InAs quantum dots in GaAs prepared on misoriented substrates

被引：14

作者：

Oswald, J

Hulicius, E

Vorlícek, V

Pangrác, J

Melichar, K

Simecek, T

Lippold, G

Riede, V

机构：

[1] Acad Sci Czech Republ, Inst Phys, Prague 16253, Czech Republic

[2] Univ Leipzig, Fak Phys & Geowissensch, Inst Expt Phys 2, D-04103 Leipzig, Germany

来源：

THIN SOLID FILMS | 1998年 / 336卷 / 1-2期

关键词：

quantum dots; photoluminescence; Raman spectroscopy;

D O I：

10.1016/S0040-6090(98)01299-1

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Optical properties of quasi zero-dimensional semiconductor quantum dots were studied by photoluminescence and Raman spectroscopy. The dependence of photoluminescence on substrate orientation and Raman spectra of single and multiple InAs/GaAs quantum dot structures are reported. The samples were grown on (100) oriented GaAs substrates without and with 3 degrees misorientation towards (110) by metal-organic vapor phase epitaxy in the Stranski-Krastanow regime. Strong dependence of photoluminescence properties of the quantum dot structures on substrate misorientation is shown. The InAs-related features an observed in the macro-Raman spectra and micro-Raman spectra. The effects of confinement, alloying and strain on PL and on phonon spectra are discussed. (C) 1998 Elsevier Science S.A. All rights reserved.

引用

页码：80 / 83

页数：4

共 10 条

[1] INTERNAL-STRESS EFFECTS ON RAMAN-SPECTRA OF INXGA1-XAS ON INP [J].