VERY HIGH TUNABILITY OF BaSnxTi1-xO3 FERROELECTRIC THIN FILMS DEPOSITED BY SOL-GEL

被引：19

作者：

Mascot, Manuel ^{[1
]}

Fasquelle, Didier

Carru, Jean-Claude

机构：

[1] Univ Lille Nord France, F-59000 Lille, France

来源：

FUNCTIONAL MATERIALS LETTERS | 2011年 / 4卷 / 01期

关键词：

Sol-gel; BaSnTiO3; ferroelectric thin films; tunability; BARIUM-TITANATE CERAMICS; DIELECTRIC-PROPERTIES; MICROSTRUCTURE;

D O I：

10.1142/S1793604711001646

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Ba(Sn0.02Ti0.98)O-3 thin films (BTS) were prepared by sol-gel route and deposited by spin-coating on commercial Pt/Ti/SiO2/Si substrates. By modifying the annealing conditions from 750 degrees C for 1 h to 950 degrees C for 15 min, the grain size increased from 60 nm to 110 nm due to the increased driving force. The dielectric permittivity epsilon' and tunability n(r) are correlated with the grain size: these parameters increase with the grain size. At room temperature for the BST film annealed at 950 degrees C, a record value of 76% of tunability is obtained at 10 kHz. This very high value of tunability makes BaSnTiO3 a very good candidate for tunable devices.

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页码：49 / 52

页数：4

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