Giant two-photon absorption in monolayer MoS2

被引:190
作者
Li, Yuanxin [1 ]
Dong, Ningning [1 ]
Zhang, Saifeng [1 ]
Zhang, Xiaoyan [1 ]
Feng, Yanyan [1 ]
Wang, Kangpeng [1 ]
Zhang, Long [1 ]
Wang, Jun [1 ,2 ]
机构
[1] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, Key Lab Mat High Power Laser, Shanghai 201800, Peoples R China
[2] Chinese Acad Sci, Shanghai Inst Opt & Fine Mech, State Key Lab High Field Laser Phys, Shanghai 201800, Peoples R China
关键词
Two-photon absorption; two-photon pumped frequency upconverted luminescence; saturable absorption; transition-metal dichalcogenides; MoS2; MOLYBDENUM-DISULFIDE MOS2; CHEMICAL-VAPOR-DEPOSITION; DOPED FIBER LASER; SATURABLE ABSORBER; LAYER MOS2; NONLINEAR REFRACTION; ATOMIC LAYERS; SEMICONDUCTORS; SATURATION; NANOSHEETS;
D O I
10.1002/lpor.201500052
中图分类号
O43 [光学];
学科分类号
070207 ; 0803 ;
摘要
Strong two-photon absorption (TPA) in monolayer MoS2 is demonstrated in contrast to saturable absorption (SA) in multilayer MoS2 under the excitation of femtosecond laser pulses in the near-infrared region. MoS2 in the forms of monolayer single crystal and multilayer triangular islands are grown on either quartz or SiO2/Si by employing the seeding method through chemical vapor deposition. The nonlinear transmission measurements reveal that monolayer MoS2 possesses a nonsaturation TPA coefficient as high as approximate to(7.62 +/- 0.15) x10(3)cm/GW, larger than that of conventional semiconductors by a factor of 10(3). As a result of TPA, two-photon pumped frequency upconverted luminescence is observed directly in the monolayer MoS2. For the multilayer MoS2, the SA response is demonstrated with the ratio of the excited-state absorption cross section to ground-state cross section of approximate to 0.18. In addition, the laser damage threshold of the monolayer MoS2 is approximate to 97 GW/cm(2), larger than that of the multilayer MoS2 of approximate to 78 GW/cm(2).
引用
收藏
页码:427 / 434
页数:8
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