Structural sensitivity analysis of slanted beam MEMS capacitive accelerometers

Analysis of slanted beam MEMS capacitive accelerometer structures has been presented in this paper. A new structure has been proposed to be used for high g applications upto +/- 30 g. The proposed new structure has been compared with three other different structures. All the four structures were simulated using CoventorWare (TM) 2005 and their performance characteristics were compared. It has been found that other three structures are found suitable only for low g applications up to +/- 2 g. One among the four designs known as single beam structure was successfully fabricated in a single step anisotropic wet chemical etching in aqueous KOH solution using < 111 > plane as physical etch stop.