Impact of tunnel etching process on electrical performances of SON devices

被引：10

作者：

Caubet, V

Borel, S

Arvet, C

Bilde, J

Chanemougame, D

Monfray, S

Ranica, R

Mazoyer, P

Skotnicki, T

机构：

[1] STMicroelect, F-38926 Crolles, France

[2] CEA Leti, F-38054 Grenoble, France

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS | 2005年 / 44卷 / 7B期

关键词：

isotropic etching; selectivity; Si; SiGe; electrical tests; SON; NVM;

D O I：

10.1143/JJAP.44.5795

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The removal of a sacrificial SiGe layer by isotropic etching has been newly improved for silicon-on-nothing (SON) technology by increasing etching selectivity to the Si conduction channel. Still based on CF(4) plasma chemistry, power and pressure are adapted in order to decrease etch rate and improve SiGe:Si selectivity. Both electrical characteristics and morphological observations are used to evaluate the characteristics of this technological step in terms of selectivity and uniformity. An original nonvolatile memory (NVM) concept based on this process will illustrate the interest in such etching development.

引用

页码：5795 / 5798

页数：4

共 8 条

[1] Isotropic etching of SiGe alloys with high selectivity to similar materials [J].

Borel, S ;

Arvet, C ;

Bilde, J ;

Harrison, S ;

Louis, D .

MICROELECTRONIC ENGINEERING, 2004, 73-4 :301-305

[2]

BROENSTEIN JT, 1999, IEEE, P205

[3] SiGe growth kinetics and doping in reduced pressure-chemical vapor deposition [J].

Hartmann, JM ;

Loup, V ;

Rolland, G ;

Holliger, P ;

Laugier, F ;

Vannuffel, C ;

Séméria, MN .

JOURNAL OF CRYSTAL GROWTH, 2002, 236 (1-3) :10-20

[4] Role of N-2 addition on CF4/O-2 remote plasma chemical dry etching of polycrystalline silicon [J].

Matsuo, PJ ;

Kastenmeier, BEE ;

Beulens, JJ ;

Oehrlein, GS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1997, 15 (04) :1801-1813

[5]

MONFRAY S, 2001, IEDM, P645

[6] STUDIES OF THE REACTIVE ION ETCHING OF SIGE ALLOYS [J].

OEHRLEIN, GS ;

KROESEN, GMW ;

DEFRESART, E ;

ZHANG, Y ;

BESTWICK, TD .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1991, 9 (03) :768-774

[7]

RANICA R, 2004, SILICON NANOELECTRON, P99

[8]

Weast R.C., 1972, CRC handbook of chemistry and physics, V52nd edition

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