Impurity incorporation in heteroepitaxial N-face and Ga-face GaN films grown by metalorganic chemical vapor deposition

被引:163
作者
Fichtenbaum, N. A. [1 ,2 ]
Mates, T. E. [1 ,2 ]
Keller, S. [1 ,2 ]
DenBaars, S. P. [1 ,2 ]
Mishra, U. K. [1 ,2 ]
机构
[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA
[2] Univ Calif Santa Barbara, Dept Mat, Santa Barbara, CA 93106 USA
基金
美国国家科学基金会;
关键词
impurities; N-polar; polarity; metalorganic chemical vapor deposition; nitrides;
D O I
10.1016/j.jcrysgro.2007.12.051
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this work secondary ion mass spectroscopy was used to investigate the incorporation of oxygen, carbon, and hydrogen impurities in smooth N-face (0 0 0 1) and Ga-face (0 0 0 1) GaN films grown by metalorganic chemical vapor deposition. The smooth N-face films were obtained on vicinal sapphire substrates, of which the misorientations 2 degrees, 4 degrees, and 5 degrees towards [10 (1) over bar0]Al2O3, as well as 4 degrees and 5 degrees towards [11 (2) over bar0]Al2O3 were explored. Results are presented for variations in temperature, pressure, V/III ratio, and Ga flow. Additionally, the incorporation of intentional dopants Si, for n-type doping, and Mg, for p-type doping were investigated. The misorientation angle and direction did not impact the impurity incorporation on the N-face. In comparison to the Ga-face, the N-face GaN films contained significantly higher concentrations of oxygen, however, demonstrated lower levels of carbon. Incorporation of Mg and Si dopants were found to be similar in N-face and Ga-face films. Additionally, significantly sharper Mg-doping profiles in N-face films in comparison to Ga-face films were observed. (C) 2008 Elsevier B.V. All rights reserved.
引用
收藏
页码:1124 / 1131
页数:8
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