Silicon-Chip-Based Real-Time Dispersion Monitoring for 640 Gbit/s DPSK Signals

被引:27
作者
Vo, Trung D. [1 ]
Corcoran, Bill [1 ]
Schroeder, Jochen [1 ]
Pelusi, Mark D. [1 ]
Xu, Dan-Xia [2 ]
Densmore, Adam [2 ]
Ma, Rubin [2 ]
Janz, Siegfried [2 ]
Moss, David J. [1 ]
Eggleton, Benjamin J. [1 ]
机构
[1] Univ Sydney, Ctr Ultrahigh Bandwidth Devices Opt Syst, Inst Photon & Opt Sci, Sch Phys, Sydney, NSW 2006, Australia
[2] CNR, Inst Microstruct Sci, Ottawa, ON K1A 0R6, Canada
基金
澳大利亚研究理事会;
关键词
Nonlinear optics; optical performance monitoring (OPM); optical planar waveguides; optical signal processing; spectral analysis; CROSS-PHASE MODULATION; RAMAN AMPLIFICATION; WAVELENGTH CONVERSION; WAVE-GUIDES; NANOWIRE; CONJUGATION; GENERATION; OOK;
D O I
10.1109/JLT.2011.2141974
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We demonstrate silicon-chip-based instantaneous chromatic dispersion monitoring (GVD) for an ultrahigh bandwidth 640 Gbit/s differential phase-shift keying (DPSK) signal. This monitoring scheme is based on cross-phase modulation in a highly nonlinear silicon nanowire. We show that two-photon absorption and free-carrier-related effects do not compromise the GVD monitoring performance, making our scheme a reliable on-chip CMOS-compatible, all-optical, and real-time impairment monitoring approach for up to Terabit/s DPSK signals.
引用
收藏
页码:1790 / 1796
页数:7
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