Plasma-assisted MBE growth of GaN on Si(111) substrates

被引：29

作者：

Sobanska, M. ^{[1
]}

Klosek, K. ^{[1
]}

Zytkiewicz, Z. R. ^{[1
]}

Borysiuk, J. ^{[1
]}

Witkowski, B. S. ^{[1
]}

Lusakowska, E. ^{[1
]}

Reszka, A. ^{[1
]}

Jakiela, R. ^{[1
]}

机构：

[1] Polish Acad Sci, Inst Phys, PL-02668 Warsaw, Poland

来源：

CRYSTAL RESEARCH AND TECHNOLOGY | 2012年 / 47卷 / 03期

关键词：

GaN; Si; plasma-assisted molecular beam epitaxy; MBE; MOLECULAR-BEAM EPITAXY; SINGLE-CRYSTALLINE GAN; BUFFER LAYER; QUALITY; ALN;

D O I：

10.1002/crat.201100408

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

In this work we present details of growth of GaN epitaxial layers on Si(111) substrates by molecular beam epitaxy (MBE) with the use of RF nitrogen plasma source. We focus on preparation of silicon substrate before the growth, on procedure of AlN buffer growth initiation (aluminum or nitrogen first) and on influence of III/N ratio on structural properties of the layers. (C) 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)

引用

页码：307 / 312

页数：6

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