The Dual-Drive Power Amplifier: The Next Frontier in Power Amplification

被引：0
作者：
Lee, Sanghoon [1 ]
Kaney, James [1 ]
Garay, Edgar [1 ]
机构：
[1] Falcomm, Atlanta, GA 30361 USA
来源：
MICROWAVE JOURNAL | 2022年 / 65卷 / 11期
关键词：
Efficiency - Silicon on insulator technology;
D O I：
暂无
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The first generation 30 GHz Dual-Drive™ power amplifier (PA) using a 45 nm silicon on insulator (SOI) process achieves 50 percent power-added efficiency (PAE) for a two-stage proof-of-concept, which is the highest efficiency ever achieved for a two-stage PA at 30 GHz on CMOS. © 2022 Horizon House. All rights reserved.
引用
收藏
页码：22 / 34
页数：13
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