On the correlation between morphology and gas sensing properties of RGTO SnO2 thin films

被引:14
作者
Szuber, J [1 ]
Uljanow, J
Karczewska-Buczek, T
Jakubik, W
Waczynski, K
Kwoka, M
Konczak, S
机构
[1] Silesian Tech Univ, Dept Microelect, Gliwice, Poland
[2] Silesian Tech Univ, Inst Elect, Gliwice, Poland
[3] Silesian Tech Univ, Inst Inorgan Chem, Gliwice, Poland
[4] Silesian Tech Univ, Inst Phys, PL-44100 Gliwice, Poland
关键词
tin dioxide; thin films; deposition; oxidation; gas response;
D O I
10.1016/j.tsf.2005.04.011
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
In this paper, we present the results of studies on optimalisation of morphology of the SnO2 thin films grown by RGTO technique for application as gas sensor structures. The Sri thin films were grown on Si(111) wafer and AI(2)O(3) ceramic plate heated in the range 235-295 degrees C and subsequently oxidized in dry oxygen atmosphere at high temperature, up to 700 degrees C. Our studies confirmed that the highest surface coverage of Sri droplets can be reached for the substrate temperature of about 265 degrees C leading to the highest surface-to-volume ratio of SnO2 thin films. It was in a good correlation to the optimal gas sensor response and sensor sensitivity of RGTO SnO2 thin films to nitrogen dioxide NO2. (c) 2005 Elsevier B.V. All rights reserved.
引用
收藏
页码:54 / 58
页数:5
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