Investigation of Hot Carrier Stress and Constant Voltage Stress in High-κ Si-Based TFETs

被引：14

作者：

Ding, Lili ^{[1
,2
,3
]}

Gnani, Elena ^{[2
,3
]}

Gerardin, Simone ^{[4
]}

Bagatin, Marta ^{[4
]}

Driussi, Francesco ^{[5
]}

Palestri, Pierpaolo ^{[5
]}

Selmi, Luca ^{[5
]}

Le Royer, Cyrille ^{[6
]}

Paccagnella, Alessandro ^{[4
]}

机构：

[1] Univ Padua, Dept Informat Engn, RREACT Grp, I-35122 Padua, Italy

[2] Univ Bologna, ARCES, I-40126 Bologna, Italy

[3] Univ Bologna, DEI, I-40126 Bologna, Italy

[4] Univ Padua, Dept Informat Engn, I-35122 Padua, Italy

[5] Univ Udine, Dept Elect Mech & Management Engn, I-833100 Udine, Italy

[6] CEA, LETI, F-38054 Grenoble, France

来源：

IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY | 2015年 / 15卷 / 02期

关键词：

Tunnel FET; hot carrier stress; constant voltage tress; high-kappa dielectric; TUNNEL; CHARGE; SUBTHRESHOLD; TRANSISTORS;

D O I：

10.1109/TDMR.2015.2423095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports the experimental investigation of hot carrier stress (HCS) and constant voltage stress (CVS) in high-kappa Si-based tunnel FETs. For the devices in this paper, due to the large injection of cold carriers and to the presence of traps in the gate dielectric, the degradation of the transfer characteristics under CVS is much more severe than under HCS. The experimental results show that the sub-threshold swing remains stable under both HCS and CVS conditions, and it is not influenced by the stress-induced increase of the interface trap density.

引用

页码：236 / 241

页数：6

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