Investigation of phase transition of Ge2Sb2Te5 and N-incorporated Ge2Sb2Te5 films using x-ray absorption spectroscopy

被引：19

作者：

Kim, Youngkuk ^{[1
]}

Jang, M. H. ^{[1
]}

Jeong, K. ^{[1
]}

Cho, M. -H. ^{[1
]}

Do, K. H. ^{[2
]}

Ko, D. -H. ^{[2
]}

Sohn, H. C. ^{[2
]}

Kim, Min Gyu ^{[3
]}

机构：

[1] Yonsei Univ, Inst Phys & Appl Phys, Seoul 120749, South Korea

[2] Yonsei Univ, Dept Ceram Engn, Seoul 120749, South Korea

[3] Pohang Univ Sci & Technol, Pohang Accelerator Lab, Pohang 790784, Kyungbuk, South Korea

来源：

APPLIED PHYSICS LETTERS | 2008年 / 92卷 / 06期

关键词：

D O I：

10.1063/1.2844878

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

For this study, the phase-change materials Ge2Sb2Te5 and N-doped Ge2Sb2Te5 films were investigated using x-ray absorption near-edge structure and extended x-ray absorption fine structure. During the phase transition, change in electronic structure is observed by the shift of the absorption edge energy, i.e., structural coordination of Ge-Te changes from tetrahedral to octahedral coordination, of which the interatomic distances are 3.12 and 2.83 A, respectively. In addition, nitrogen incorporation into the film led to a p-p orbital hybridization and a different crystallization behavior. The hybridization caused by the formation of a Ge-N bond was related to suppression of the phase transition. (c) 2008 American Institute of Physics.

引用

页数：3

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