Terahertz and infrared detectors based on graphene structures

被引：31
|
作者：
Ryzhii, Victor [1 ,2 ]
Ryzhii, Maxim [1 ,2 ]
Ryabova, Nadezhda [1 ,2 ]
Mitin, Vladimir [3 ]
Otsuji, Taiichi [2 ,4 ]
机构：
[1] Univ Aizu, Computat Nanoelect Lab, Aizu Wakamatsu, Fukushima 9658580, Japan
[2] Japan Sci & Technol Agcy, CREST, Tokyo 1070075, Japan
[3] SUNY Buffalo, Dept Elect Engn, Buffalo, NY 14260 USA
[4] Tohoku Univ, Elect Commun Res Inst, Sendai, Miyagi 9808577, Japan
来源：
INFRARED PHYSICS & TECHNOLOGY | 2011年 / 54卷 / 03期
基金：
美国国家科学基金会;
关键词：
Detector; Graphene; Photocurrent; Dark current; Responsivity; Detectivity;
D O I：
10.1016/j.infrared.2010.12.034
中图分类号：
TH7 [仪器、仪表];
学科分类号：
0804 ; 080401 ; 081102 ;
摘要：
We consider newly proposed terahertz and infrared interband detectors based on multiple-graphene-layer structures with p-i-n junctions. Using the developed device model, we calculate the photodetector characteristics (responsivity and dark current limited detectivity) and compare them with the characteristics of other photodetectors. It is shown that due to relatively high quantum efficiency and weakened thermogeneration processes, the detectors under consideration can exhibit superior performance. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：302 / 305
页数：4
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