Emitting heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer

被引：2

作者：

Vikhrova, O. V. ^{[1
]}

Danilov, Yu. A. ^{[1
]}

Zvonkov, B. N. ^{[1
]}

Demina, P. B. ^{[1
]}

Dorokhin, M. V. ^{[1
]}

Kalentyeva, I. L. ^{[1
]}

Kudrin, A. V. ^{[1
]}

机构：

[1] Lobachevsky State Univ, Res Inst Phys & Technol, Nizhnii Novgorod 603950, Russia

来源：

PHYSICS OF THE SOLID STATE | 2017年 / 59卷 / 11期

基金：

俄罗斯基础研究基金会;

关键词：

MOLECULAR-BEAM EPITAXY; EMISSION PROPERTIES; THIN-FILMS; GAAS; GROWTH; PHOTOLUMINESCENCE; GAASSB/GAAS; LASERS; MOVPE;

D O I：

10.1134/S1063783417110336

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The radiative and magnetic properties of novel heterostructures with a bilayer InGaAs/GaAsSb/GaAs quantum well and a GaMnAs ferromagnetic layer are studied. The circular polarization of electroluminescent radiation is observed at temperatures from 10 to 160 K. The magnetic field dependences of the degree of circular polarization are nonlinear with a hysteresis loop at temperatures from 10 to 50 K, and they become linear at higher temperatures. The magnitude of polarization at the saturation magnetization of GaMnAs in the 2000 Oe field remains at the level of similar to 0.2%.

引用

页码：2216 / 2219

页数：4

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