Normal-incidence intersubband (In, Ga)As/GaAs quantum dot infrared photodetectors

被引：324
|
作者：
Pan, D [1 ]
Towe, E
Kennerly, S
机构：
[1] Univ Virginia, Lab Opt & Quantum Elect, Charlottesville, VA 22903 USA
[2] USA, Res Lab, Adelphi, MD 20783 USA
[3] Chinese Acad Sci, Inst Semicond, Beijing 100083, Peoples R China
来源：
APPLIED PHYSICS LETTERS | 1998年 / 73卷 / 14期
关键词：
D O I：
10.1063/1.122328
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the device performance of normal-incidence (In, Ga)As/GaAs quantum dot intersubband infrared photodetectors. A primary intersubband transition peak is observed at the wavelength of 13 mu m (E-0 --> E-1) and a secondary peak at 11 mu m (E-0 --> E-2). The measured energy spacing in the conduction band of the quantum dots is in good agreement with low temperature photoluminescence measurement and calculations. A peak detectivity of 1 x 10(10) cm Hz(1/2)/W at 13 mu m was achieved at 40 K for these devices. (C) 1998 American Institute of Physics. [S0003-6951(98)01440-5].
引用
收藏
页码：1937 / 1939
页数：3
相关论文
共 50 条
  • [1] Normal-incidence quantum dot infrared photodetectors
    Chen, ZH
    Ye, ZM
    Kim, ET
    Campbell, JC
    Madhukar, A
    2002 IEEE/LEOS ANNUAL MEETING CONFERENCE PROCEEDINGS, VOLS 1 AND 2, 2002, : 752 - 753
  • [2] Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors
    Univ of Virginia, Charlottesville, United States
    Electron Lett, 19 (1883-1884):
  • [3] Conduction intersubband (In,Ga)As/GaAs quantum dot infrared photodetectors
    Pan, D
    Towe, E
    ELECTRONICS LETTERS, 1998, 34 (19) : 1883 - 1884
  • [4] A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector
    Lab. for Opt. and Quant. Electronics, University of Virginia, Charlottesville, VA 22903-2442, United States
    不详
    Appl Phys Lett, 18 (2719-2721):
  • [5] A five-period normal-incidence (In, Ga)As/GaAs quantum-dot infrared photodetector
    Pan, D
    Towe, E
    Kennerly, S
    APPLIED PHYSICS LETTERS, 1999, 75 (18) : 2719 - 2721
  • [6] Raster-scan imaging with normal-incidence, midinfrared InAs/GaAs quantum dot infrared photodetectors
    Stiff-Roberts, AD
    Chakrabarti, S
    Pradhan, S
    Kochman, B
    Bhattacharya, P
    APPLIED PHYSICS LETTERS, 2002, 80 (18) : 3265 - 3267
  • [7] Intersubband Quantum Disc-in-Nanowire Photodetectors with Normal-Incidence Response in the Long-Wavelength Infrared
    Karimi, Mohammad
    Heurlin, Magnus
    Limpert, Steven
    Jain, Vishal
    Zeng, Xulu
    Geijselaers, Irene
    Nowzari, Ali
    Fu, Ying
    Samuelson, Lars
    Linke, Heiner
    Borgstrom, Magnus T.
    Pettersson, Hakan
    NANO LETTERS, 2018, 18 (01) : 365 - 372
  • [8] Normal-incidence InAs self-assembled quantum-dot infrared photodetectors with a high detectivity
    Ye, ZM
    Campbell, JC
    Chen, ZH
    Kim, ET
    Madhukar, A
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2002, 38 (09) : 1234 - 1237
  • [9] Strong normal-incidence infrared absorption and photo-current spectra from highly uniform (In,Ga)As/GaAs quantum dot structures
    Pan, D
    Towe, E
    Kennerly, S
    ELECTRONICS LETTERS, 1998, 34 (10) : 1019 - 1020
  • [10] Normal-incidence intersubband absorption in AlGaSb quantum wells
    Jancu, JM
    Bassani, F
    Voisin, P
    JOURNAL OF APPLIED PHYSICS, 2002, 92 (01) : 641 - 643
12345