Effect of spacer layer on quantum interference in double-barrier resonant tunneling structures

被引：5

作者：

Belyaev, AE

Vitusevich, SA

Figielski, T

Glavin, BA

Konakova, RV

Kravchenko, LN

Makosa, A

Wosinski, T

机构：

[1] POLISH ACAD SCI, INST PHYS, PL-02668 WARSAW, POLAND

[2] SCI & RES INST MOL ELECT, MOSCOW 103460, RUSSIA

来源：

SURFACE SCIENCE | 1996年 / 361卷 / 1-3期

关键词：

electrical transport measurements; gallium arsenide; molecular beam epitaxy; quantum wells; semi-empirical models and model calculations; semiconductor-semiconductor heterostructures; tunneling;

D O I：

10.1016/0039-6028(96)00392-5

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The oscillations of tunnel current in double-barrier resonant tunneling structures incorporating a variety of types of spacer layers in both the emitter and the collector have been studied. In some structures the period of oscillations was found to be considerably less than LO-phonon energy. A simple model based on the quantum interference effect arising in structures having a wide spacer layer is proposed to explain the experimental results.

引用

页码：235 / 238

页数：4