Al2O3 stacks on In0.53Ga0.47As substrates: In situ investigation of the interface

被引：3
作者：
Fusi, M. [1 ]
Lamagna, L. [1 ]
Spiga, S. [1 ]
Fanciulli, M. [1 ,3 ]
Brammertz, G. [2 ]
Merckling, C. [2 ]
Meuris, M. [2 ]
Molle, A. [1 ]
机构：
[1] IMM CNR, Lab MDM, I-20041 Agrate Brianza, MB, Italy
[2] IMEC, B-3001 Louvain, Belgium
[3] Univ Milano Bicocca, Dipartimento Sci Mat, Milan, Italy
来源：
MICROELECTRONIC ENGINEERING | 2011年 / 88卷 / 04期
关键词：
High mobility semiconductors; III-V Semiconductors; Passivation; Molecular beam deposition (MBD); CMOS; TRANSISTOR; MOSFETS; GE;
D O I：
10.1016/j.mee.2010.11.015
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this work we present an in situ investigation of the interface composition between an In0.53Ga0.47As substrate and an Al2O3 oxide grown by molecular beam deposition in ultra high vacuum conditions. In the effort to improve the chemical quality of the interface, reduction of semiconductor-oxygen bonding at the interface can be obtained by growing a few angstrom thick pure Al layer before starting exposure of the surface to the atomic oxygen flux. Conversely, when a Ge interface passivation layer is intercalated between the semiconductor and the oxide stack, the interface chemistry is governed by Ge reaction with other species (Al, O), leading only to a partial suppression of the interface oxides. (C) 2010 Elsevier B.V. All rights reserved.
引用
收藏
页码：435 / 439
页数：5
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