Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

被引：6
|
作者：
Morgan, Timothy A. [1 ,6 ]
Rudie, Justin [1 ]
Zamani-Alavijeh, Mohammad [1 ,2 ]
Kuchuk, Andrian V. [1 ]
Orishchin, Nazar [3 ]
Alema, Fikadu [3 ]
Osinsky, Andrei [3 ]
Sleezer, Robert [4 ]
Salamo, Gregory [1 ]
Ware, Morgan E. [1 ,5 ]
机构：
[1] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA
[3] Agnitron Technol Inc, Chanhassen, MN 55317 USA
[4] Minnesota State Univ, Twin Cities Engn, Bloomington, MN 55431 USA
[5] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[6] Naval Surface Warfare Ctr Crane, Crane, IN 47522 USA
来源：
ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 29期
基金：
美国国家科学基金会;
关键词：
beta-aluminum gallium oxide; band offset; X-ray photoelectron spectroscopy (XPS); Tauc plots; metal-organic chemical vapor deposition (MOCVD); heterostructure; PRECISE DETERMINATION; CORE-LEVEL; BETA-GA2O3; DISCONTINUITIES;
D O I：
10.1021/acsami.2c04177
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The band offsets for the beta-(Al0.21Ga0.79)(2)O-3/beta-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality beta-(Al0.21Ga0.79)(2)O-3 films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of beta-(Al0.21Ga0.79)(2)O-3 was determined by optical transmission to be 4.69 +/- 0.03 eV with a direct transition of 5.37 +/- 0.03 eV, while beta-Ga2O3 was confirmed to have an indirect band gap of 4.52 +/- 0.03 eV with a direct transition of 4.94 +/- 0.03 eV. The resulting band alignment at the heterojunction was determined to be of type II with the valence and conduction band edges of beta-(Al0.21Ga0.79)(2)O-3 being -0.26 +/- 0.08 and 0.43 +/- 0.08 eV, respectively, above those of beta-Ga2O3 (010). These values can now be used to help better design and predict the performance of beta-(AlxGa1-x)(2)O-3 heterojunction-based devices.
引用
收藏
页码：33944 / 33951
页数：8
相关论文
共 50 条
  • [41] Valence- and Conduction-Band Offsets for Atomic-Layer-Deposited Al2O3 on (010) (Al0.14Ga0.86)2O3
    Chaker Fares
    F. Ren
    Eric Lambers
    David C. Hays
    B. P. Gila
    S. J. Pearton
    Journal of Electronic Materials, 2019, 48 : 1568 - 1573
  • [42] Single crystalline β-Ga2O3 homoepitaxial films grown by MOCVD
    Li, Zeming
    Jiao, Teng
    Yu, Jiaqi
    Hu, Daqiang
    Lv, Yuanjie
    Li, Wancheng
    Dong, Xin
    Zhang, Baolin
    Zhang, Yuantao
    Feng, Zhihong
    Li, Guoxing
    Du, Guotong
    VACUUM, 2020, 178 (178)
  • [43] Valence and conduction band offsets in AZO/Ga2O3 heterostructures
    Carey, Patrick H.
    Ren, F.
    Hays, David C.
    Gila, B. P.
    Pearton, S. J.
    Jang, Soohwan
    Kuramata, Akito
    VACUUM, 2017, 141 : 103 - 108
  • [44] Dielectric reliability and interface trap characterization in MOCVD grown in situ Al2O3 on β-Ga2O3
    Roy, Saurav
    Bhattacharyya, Arkka
    Peterson, Carl
    Krishnamoorthy, Sriram
    APPLIED PHYSICS LETTERS, 2025, 126 (01)
  • [45] Study on the optical properties of β-Ga2O3 films grown by MOCVD
    Daqiang Hu
    Shiwei Zhuang
    Zhengzheng Ma
    Xin Dong
    Guotong Du
    Baolin Zhang
    Yuantao Zhang
    Jingzhi Yin
    Journal of Materials Science: Materials in Electronics, 2017, 28 : 10997 - 11001
  • [46] Study on the optical properties of β-Ga2O3 films grown by MOCVD
    Hu, Daqiang
    Zhuang, Shiwei
    Ma, Zhengzheng
    Dong, Xin
    Du, Guotong
    Zhang, Baolin
    Zhang, Yuantao
    Yin, Jingzhi
    JOURNAL OF MATERIALS SCIENCE-MATERIALS IN ELECTRONICS, 2017, 28 (15) : 10997 - 11001
  • [47] Photoluminescence of Cr3+ in β-Ga2O3 and (Al0.1Ga0.9)2O3 under pressure
    Barmore, Lauren M. M.
    Jesenovec, Jani
    McCloy, John S. S.
    McCluskey, Matthew D. D.
    JOURNAL OF APPLIED PHYSICS, 2023, 133 (17)
  • [48] Characterization of pseudomorphic γ-Ga2O3 and γ-Al2O3 films on MgAl2O4 substrates and the band-alignment at the coherent γ-Ga2O3/Al2O3 heterojunction interface
    Oshima, Takayoshi
    Kato, Yuji
    Magome, Eisuke
    Kobayashi, Eiichi
    Takahashi, Kazutoshi
    JAPANESE JOURNAL OF APPLIED PHYSICS, 2019, 58 (06)
  • [49] Epitaxial growth and band offsets of β-(ScxGa1<bold>-</bold>x)2O3 thin films grown on (100) β-Ga2O3 substrate
    Koreishi, Kazuki
    Soma, Takuto
    Kumigashira, Hiroshi
    Ohtomo, Akira
    APPLIED PHYSICS LETTERS, 2024, 125 (15)
  • [50] Selective and nonselective plasma etching of (Al0.18Ga0.82)2O3/ Ga2O3 heterostructures
    Wan, Hsiao-Hsuan
    Chiang, Chao-Ching
    Li, Jian-Sian
    Ren, Fan
    Alema, Fikadu
    Osinsky, Andrei
    Pearton, Stephen J.
    JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2024, 42 (02):
12345