Band Offsets of the MOCVD-Grown β-(Al0.21Ga0.79)2O3/β-Ga2O3 (010) Heterojunction

被引：6
|
作者：
Morgan, Timothy A. [1 ,6 ]
Rudie, Justin [1 ]
Zamani-Alavijeh, Mohammad [1 ,2 ]
Kuchuk, Andrian V. [1 ]
Orishchin, Nazar [3 ]
Alema, Fikadu [3 ]
Osinsky, Andrei [3 ]
Sleezer, Robert [4 ]
Salamo, Gregory [1 ]
Ware, Morgan E. [1 ,5 ]
机构：
[1] Univ Arkansas, Inst Nanosci & Engn, Fayetteville, AR 72701 USA
[2] Univ Arkansas, Phys Dept, Fayetteville, AR 72701 USA
[3] Agnitron Technol Inc, Chanhassen, MN 55317 USA
[4] Minnesota State Univ, Twin Cities Engn, Bloomington, MN 55431 USA
[5] Univ Arkansas, Dept Elect Engn, Fayetteville, AR 72701 USA
[6] Naval Surface Warfare Ctr Crane, Crane, IN 47522 USA
来源：
ACS APPLIED MATERIALS & INTERFACES | 2022年 / 14卷 / 29期
基金：
美国国家科学基金会;
关键词：
beta-aluminum gallium oxide; band offset; X-ray photoelectron spectroscopy (XPS); Tauc plots; metal-organic chemical vapor deposition (MOCVD); heterostructure; PRECISE DETERMINATION; CORE-LEVEL; BETA-GA2O3; DISCONTINUITIES;
D O I：
10.1021/acsami.2c04177
中图分类号：
TB3 [工程材料学];
学科分类号：
0805 ; 080502 ;
摘要：
The band offsets for the beta-(Al0.21Ga0.79)(2)O-3/beta-Ga2O3 (010) heterojunction have been experimentally measured by X-ray photoelectron spectroscopy. High-quality beta-(Al0.21Ga0.79)(2)O-3 films were grown by metal-organic chemical vapor deposition for characterization. The indirect band gap of beta-(Al0.21Ga0.79)(2)O-3 was determined by optical transmission to be 4.69 +/- 0.03 eV with a direct transition of 5.37 +/- 0.03 eV, while beta-Ga2O3 was confirmed to have an indirect band gap of 4.52 +/- 0.03 eV with a direct transition of 4.94 +/- 0.03 eV. The resulting band alignment at the heterojunction was determined to be of type II with the valence and conduction band edges of beta-(Al0.21Ga0.79)(2)O-3 being -0.26 +/- 0.08 and 0.43 +/- 0.08 eV, respectively, above those of beta-Ga2O3 (010). These values can now be used to help better design and predict the performance of beta-(AlxGa1-x)(2)O-3 heterojunction-based devices.
引用
收藏
页码：33944 / 33951
页数：8
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