Observation of antiferromagnetic interlayer exchange coupling in a Ga1-xMnxAs/GaAs:Be/Ga1-xMnxAs trilayer structure

被引：28

作者：

Leiner, J. ^{[1
]}

Lee, H. ^{[2
]}

Yoo, T. ^{[2
]}

Lee, Sanghoon ^{[2
]}

Kirby, B. J. ^{[3
]}

Tivakornsasithorn, K. ^{[1
]}

Liu, X. ^{[1
]}

Furdyna, J. K. ^{[1
]}

Dobrowolska, M. ^{[1
]}

机构：

[1] Univ Notre Dame, Dept Phys, Notre Dame, IN 46556 USA

[2] Korea Univ, Dept Phys, Seoul 136713, South Korea

[3] NIST, Ctr Neutron Res, Gaithersburg, MD 20899 USA

来源：

PHYSICAL REVIEW B | 2010年 / 82卷 / 19期

基金：

美国国家科学基金会;

关键词：

HETEROSTRUCTURES; MULTILAYERS;

D O I：

10.1103/PhysRevB.82.195205

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Interlayer exchange coupling (IEC) between two Ga0.95Mn0.05As layers separated by Be-doped GaAs spacers was investigated experimentally using magnetization, magnetotransport and neutron-scattering measurements, which all indicated the presence of robust antiferromagnetic IEC when the GaAs spacer is sufficiently thin. We argue that the observed behavior arises from a competition between the interlayer exchange field and magnetocrystalline anisotropy fields intrinsic to GaMnAs layers.

引用

页数：5

共 50 条

[21] Effects of donor doping on Ga1-xMnxAs
Cho, Y. J.
Yu, K. M.
Liu, X.
Walukiewicz, W.
Furdyna, J. K.
APPLIED PHYSICS LETTERS, 2008, 93 (26)
[22] Electronic structure of Ga1-xMnxAs studied by photoemission spectroscopy
Okabayashi, J
Kimura, A
Rader, O
Mizokawa, T
Fujimori, A
Hayashi, T
Tanaka, M
PROCEEDINGS OF THE 25TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, PTS I AND II, 2001, 87 : 262 - 263
[23] Electronic structure and origin of ferromagnetism in Ga1-xMnxAs semiconductors
da Silva, AJR
Fazzio, A
dos Santos, RR
Oliveira, LE
PHYSICA B-CONDENSED MATTER, 2003, 340 : 874 - 877
[24] Magnetic domain structure and magnetic anisotropy in Ga1-xMnxAs
Welp, U.
Vlasko-Vlasov, V.K.
Liu, X.
Furdyna, J.K.
Wojtowicz, T.
Physical Review Letters, 2003, 90 (16) : 1 - 167206
[25] Integrated micromechanical cantilever magnetometry of Ga1-xMnxAs
Harris, JGE
Awschalom, DD
Matsukura, F
Ohno, H
Maranowski, KD
Gossard, AC
APPLIED PHYSICS LETTERS, 1999, 75 (08) : 1140 - 1142
[26] Hall effect and hole densities in Ga1-xMnxAs
Edmonds, KW
Wang, KY
Campion, RP
Neumann, AC
Foxon, CT
Gallagher, BL
Main, PC
APPLIED PHYSICS LETTERS, 2002, 81 (16) : 3010 - 3012
[27] Measurement of magnetization of Ga1-xMnxAs by ferromagnetic resonance
Hagmann, J. A.
Traudt, K.
Zhou, Y. Y.
Liu, X.
Dobrowolska, M.
Furdyna, J. K.
JOURNAL OF MAGNETISM AND MAGNETIC MATERIALS, 2014, 360 : 137 - 142
[28] Magnetoresistance of Ga1-xMnxAs epitaxial layers doped by Be
Yuldashev, SU
Im, H
Yalishev, VS
Park, CS
Kang, TW
Lee, S
Sasaki, Y
Liu, X
Furdyna, JK
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS BRIEF COMMUNICATIONS & REVIEW PAPERS, 2003, 42 (10): : 6256 - 6259
[29] Structural characterization of In1-xMnxAs and Ga1-xMnxAs epitaxial magnetic films grown by MBE on GaAs
Bender, H
VanEsch, A
VanRoy, W
Oesterholt, R
DeBoeck, J
Borghs, G
MICROSCOPY OF SEMICONDUCTING MATERIALS 1995, 1995, 146 : 293 - 296
[30] THERMOELECTRIC POWER IN EPITAXIAL Ga1-xMnxAs FILMS
Radchenko, M. V.
Lashkarev, G. V.
Sichkovskyy, V. I.
Osinniy, V.
Story, T.
Sadowski, J.
UKRAINIAN JOURNAL OF PHYSICS, 2005, 50 (12): : 1351 - 1355

← 1 2 3 4 5 →