Mg-doped Al0.85Ga0.15N layers grown by hot-wall MOCVD with low resistivity at room temperature

被引：29

作者：

Kakanakova-Georgieva, A. ^{[1
]}

Nilsson, D. ^{[1
]}

Stattin, M. ^{[2
]}

Forsberg, U. ^{[1
]}

Haglund, A. ^{[2
]}

Larsson, A. ^{[2
]}

Janzen, E. ^{[1
]}

机构：

[1] Linkoping Univ, Dept Phys Chem & Biol IFM, S-58183 Linkoping, Sweden

[2] Chalmers Univ Technol, Dept Microtechnol & Nanosci, Photon Lab, S-41296 Gothenburg, Sweden

来源：

PHYSICA STATUS SOLIDI-RAPID RESEARCH LETTERS | 2010年 / 4卷 / 11期

基金：

瑞典研究理事会;

关键词：

MOCVD; epitaxy; high-Al-content AlGaN; p-type semiconductors; electrical properties; DEVICES;

D O I：

10.1002/pssr.201004290

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

We report on the hot-wall MOCVD growth of Mg-doped AlxGa1-xN layers with an Al content as high as x similar to 0.85. After subjecting the layers to post-growth in-situ annealing in nitrogen in the growth reactor, a room temperature resistivity of 7 k Omega cm was obtained indicating an enhanced p-type conductivity compared to published data for AlxGa1-xN layers with a lower Al content of x similar to 0.70 and a room temperature resistivity of about 10 k Omega cm. It is believed that the enhanced p-type conductivity is a result of reduced compensation by native defects through growth conditions enabled by the distinct hot-wall MOCVD system. (C) 2010 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：311 / 313

页数：3

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