High-speed amorphous silicon germanium infrared sensors prepared on crystalline silicon substrates

Different structures of high-speed infrared sensors based on amorphous silicon germanium and amorphous silicon heterostructures have been successfully developed on crystalline silicon substrates. Experimental results of these developed structures exhibit a superior device performance to that of a traditional p-i-n amorphous photosensor prepared on a glass substrate, especially significant improvements in the rise-time from 465 to 195 mu s, and the dark-current from 50 to 3.3 mu A for 5 V reverse-bias.