High-mobility polymer space-charge-limited transistor with grid-induced crystallinity

被引：17

作者：

Chao, Yu-Chiang ^{[3
]}

Niu, Mu-Chun ^{[3
]}

Zan, Hsiao-Wen ^{[1
,2
]}

Meng, Hsin-Fei ^{[3
]}

Ku, Ming-Che ^{[1
,2
]}

机构：

[1] Natl Chiao Tung Univ, Dept Photon, Hsinchu 300, Taiwan

[2] Natl Chiao Tung Univ, Inst Electroopt, Hsinchu 300, Taiwan

[3] Natl Chiao Tung Univ, Inst Phys, Hsinchu 300, Taiwan

来源：

ORGANIC ELECTRONICS | 2011年 / 12卷 / 01期

关键词：

Vertical transistor; Space-charge-limited current; HIGH-PERFORMANCE; POLY(3-HEXYLTHIOPHENE); MATRIX; CELLS;

D O I：

10.1016/j.orgel.2010.09.023

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The vertical mobility of a polymer film prepared on a textured substrate is enhanced from 10 (5) cm(2)/Vs to 10 (3) cm(2)/Vs by a slow drying process which is unattainable in planar substrate. Highly ordered structure is observed for polymer film treated with high-boiling-point solvent and slow solvent annealing. The enhanced vertical mobility enables the polymer space-charge-limited transistor (SCLT) capable of outputting current density as high as 100 mA/cm(2) while maintaining good current gain and on-off ratio. Such vertical transistor is able to drive high-power devices or mechanical actuator in large-area and flexible array. (C) 2010 Elsevier B. V. All rights reserved.

引用

页码：78 / 82

页数：5

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