Novel Linearly Graded Nanotube Field-Effect Transistors for Improved Analog Performance and Reduced Leakage Current

In present work, a Linearly Graded (LG) work function is studied by considering the binary metal alloy A(sigma)B(1-sigma) composition for the gate electrode. A high-k gate stack LG nanotube field-effect transistor (LG-NT-FET) is investigated for improving the analog performance and reduced leakage current. The present paper introduces novelty by adding charge plasma on the drain side while doping the source side in LG-NT-FET. The proposed device has the core gate, which lays inside the channel and drain area. Both the gates, including the inner and outer gates are playing a crucial role to significantly charge the channel of LG-NT-FET. It can significantly reduce the Short Channel Effects (SCEs) also. Evaluating the electrical performance metrics such as drive currents and SCEs of LG-NT-FET reveals that the proposed device can better perform in comparison with single gate silicon-based nanotube field-effect transistors (SG-NT-FETs). The device metrics get further enhanced with the tightened electrostatic control via stacking of the core-shell gate that enabled volume inversion-phase operation. The comparison of the LG-NT-FET with single gate NTFET offered a significant reduction in leakage current (similar to 10(-15)), rise in I-ON/I(OFF )ratio (similar to 10(13)), increase in transconductance and cutoff frequency as compared to the single gate SG-NT-FET. These improvements in electrical performance metrics enable the proposed device, LG-NT-FET, as a potential device to enable CMOS scaling criteria beyond the Si-NW-FET. These improvised characteristics make LG-NT-FET a promising device in designing both digitals and analog applications for FETs.