Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors

被引:8
作者
Cosseddu, P. [1 ]
Bonfiglio, A.
机构
[1] Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy
关键词
THIN-FILM TRANSISTORS; MOBILITY;
D O I
10.1063/1.3515297
中图分类号
O59 [应用物理学];
学科分类号
摘要
Microcontact printing has been used for realizing all organic, highly flexible, ambipolar field effect transistors based on a pentacene-C60 heterojunction. The contacts were patterned using poly(ethylenedioxythiophene):poly(styrenesulfonate) as conductive polymer. We have compared three different device architectures, bottom contact, top contact, and middle contact, and demonstrated in the last case that a perfect balance between n-and p-type mobilities may be obtained, being source ad drain directly interfaced with both semiconductors. This led to a significant improvement of the electrical performances, which, in turn, allowed the realization of all organic complementary inverters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515297]
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页数:3
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