Influence of device geometry in the electrical behavior of all organic ambipolar field effect transistors

被引：8

作者：

Cosseddu, P. ^{[1
]}

Bonfiglio, A.

机构：

[1] Univ Cagliari, Dept Elect & Elect Engn, I-09123 Cagliari, Italy

来源：

APPLIED PHYSICS LETTERS | 2010年 / 97卷 / 20期

关键词：

THIN-FILM TRANSISTORS; MOBILITY;

D O I：

10.1063/1.3515297

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Microcontact printing has been used for realizing all organic, highly flexible, ambipolar field effect transistors based on a pentacene-C60 heterojunction. The contacts were patterned using poly(ethylenedioxythiophene):poly(styrenesulfonate) as conductive polymer. We have compared three different device architectures, bottom contact, top contact, and middle contact, and demonstrated in the last case that a perfect balance between n-and p-type mobilities may be obtained, being source ad drain directly interfaced with both semiconductors. This led to a significant improvement of the electrical performances, which, in turn, allowed the realization of all organic complementary inverters. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3515297]

引用

页数：3

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