Demonstration of a Dual-Band InAs/GaSb Type-II Superlattice Infrared Detector Based on a Single Heterojunction Diode

被引：13

作者：

Hao, Xiujun ^{[1
,2
]}

Deng, Zhuo ^{[4
]}

Huang, Jian ^{[4
]}

Huang, Yong ^{[1
,3
]}

Yang, Hui ^{[1
,2
,3
]}

Teng, Yan ^{[1
,3
]}

Zhao, Yu ^{[1
]}

Wu, Qihua ^{[1
]}

Li, Xin ^{[1
,3
]}

Liu, Jiafeng ^{[1
]}

Chen, Ying ^{[1
,3
]}

Zhu, He ^{[1
,3
]}

Chen, Baile ^{[4
]}

机构：

[1] Chinese Acad Sci, Suzhou Inst Nanotech & Nanobion, Key Lab Nanodevices & Applicat, Suzhou 215123, Peoples R China

[2] ShanghaiTech Univ, Sch Phys Sci & Technol, Shanghai 201210, Peoples R China

[3] Univ Sci & Technol China, Sch Nano Technol & Nano Bion, Hefei 230026, Peoples R China

[4] ShanghaiTech Univ, Sch Informat Sci & Technol, Shanghai 201210, Peoples R China

来源：

IEEE JOURNAL OF QUANTUM ELECTRONICS | 2020年 / 56卷 / 02期

基金：

中国国家自然科学基金;

关键词：

Dual-band infrared detectors; InAs/GaSb type-II superlattices; single heterostructure; PNn structure; metal-organic chemical vapor deposition; QWIP; TECHNOLOGY; GROWTH;

D O I：

10.1109/JQE.2019.2961123

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We propose and demonstrate a new single heterojunction structure for dual-band detection based on typeII InAs/GaSb superlattices grown by metal-organic chemical vapor deposition. The structure simply consists of a p-type mid-wavelength contact layer, an n-type mid-wavelength absorber and an n-type long-wavelength absorber. At a small reverse bias, the presence of a potential barrier in the valence band between the two adjacent absorbers allows the mid-wavelength channel to work only; at a higher bias where the potential barrier no longer exists, photo-generated holes in the long-wavelength absorber are able to transport through the mid-wavelength absorber and reach the p-contact, making both channels to work. At -0.1 V and 77 K, the mid-wavelength channel exhibited a 50% cut-off wavelength of 3.5 mu m, a dark current density of 2.4x10(-9) A/cm(2), and a peak specific detectivity of 1.4x10(13) cm.Hz(1/2) /W; while at -0.3 V the long-wavelength channel exhibited a 50% cut-off wavelength of 8.0 mu m, a dark current density of 5.1x10(-7) A/cm(2), and a peak specific detectivity of 3.6x10(12) cm.Hz(1/2) /W.

引用

页数：6

共 24 条

[1] Large format, broadband and multi-color GaAs/AlGaAs quantum well infrared photodetector (QWIP) focal plane arrays [J].