Low temperature process for high density thin film integrated capacitors

Most research on high k thin films has focused on solutions for the DRAM industry. However, a major draw-back of the high k dielectrics that have been developed for the DRAM industry is that they require high processing temperatures, generally in excess of 500 degreesC, which make them difficult to incorporate into many integrated passive devices. In this paper we describe a new dielectric material with capacitance density up to 2500 nF/cm(2) and leakage of <10(-) A/cm(2) with all processing at less than 400<degrees>C. The material is an amorphous mixture of Bi2O3 and Ta2O5. A metalorganic chemical vapor deposition (MOCVD) process is used to produce these high quality films with a RMS roughness < 1nm, independent of film thickness. These thin films should be suitable for many integrated passive systems.