Controlled Gas Molecules Doping of Monolayer MoS2 via Atomic-Layer-Deposited Al2O3 Films

被引：32

作者：

Li, Yuanzheng ^{[1
,2
,3
,5
]}

Li, Xinshu ^{[1
,2
,5
]}

Chen, Heyu ^{[1
,2
,5
]}

Shi, Jia ^{[3
]}

Shang, Qiuyu ^{[4
]}

Zhang, Shuai ^{[3
]}

Qui, Xiaohui ^{[3
]}

Liu, Zheng ^{[6
]}

Zhang, Qing ^{[4
]}

Xu, Haiyang ^{[1
,2
,5
]}

Liu, Weizhen ^{[1
,2
,5
]}

Liu, Xinfeng ^{[3
]}

Liu, Yichun ^{[1
,2
,5
]}

机构：

[1] Northeast Normal Univ, Minist Educ, Ctr Adv Optoelect Funct Mat Res, Changchun 130024, Jilin, Peoples R China

[2] Northeast Normal Univ, Minist Educ, Key Lab UV Emitting Mat & Technol, Changchun 130024, Jilin, Peoples R China

[3] Natl Ctr Nanosci & Technol, CAS Ctr Excellence Nanosci, Div Nanophoton, CAS Key Lab Standardizat & Measurement Nanotechno, Beijing 100190, Peoples R China

[4] Peking Univ, Dept Mat Sci & Engn, Coll Engn, Beijing 100871, Peoples R China

[5] Northeast Normal Univ, Natl Demonstrat Ctr Expt Phys Educ, Changchun 130024, Jilin, Peoples R China

[6] Nanyang Technol Univ, Sch Mat Sci & Engn, Ctr Programmable Mat, Singapore 639798, Singapore

来源：

ACS APPLIED MATERIALS & INTERFACES | 2017年 / 9卷 / 33期

基金：

中国国家自然科学基金; 新加坡国家研究基金会;

关键词：

monolayer MoS2; aomic layer deposition (ALD); gas molecules doping; Al2O3; stability; 2-DIMENSIONAL SEMICONDUCTORS; PHOTOLUMINESCENCE; ENHANCEMENT; TRANSITION; DEFECTS; TRIONS; GROWTH;

D O I：

10.1021/acsami.7b08893

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

MoS2 as atomically thin semiconductor is highly sensitive to ambient atmosphere (e.g., oxygen, moisture, etc.) in optical and electrical properties. Here we report a controlled gas molecules doping of monolayer MoS2 via atomic-layer-deposited Al2O3 films. The deposited Al2O3 films, in the shape of nanospheres, can effectively control the contact areas between ambient atmosphere and MoS2 that allows precise modulation of gas molecules doping. By analyzing photoluminescence (PL) emission spectra of MoS2 with different thickness of Al2O3, the doped carrier concentration is estimated at similar to 2.7 X 10(13) cm(-2) based on the mass action model. Moreover, time-dependent PL measurements indicate an incremental stability of single layer MoS2 as the thicknesses of Al2O3 capping layer increase. Effective control of gas molecules doping in monolayer MoS2 provides us a valuable insight into the applications of MoS2 based optical and electrical devices.

引用

页码：27402 / 27408

页数：7

共 31 条

[1] Symmetry-dependent phonon renormalization in monolayer MoS2 transistor [J].

Chakraborty, Biswanath ;

Bera, Achintya ;

Muthu, D. V. S. ;

Bhowmick, Somnath ;

Waghmare, U. V. ;

Sood, A. K. .

PHYSICAL REVIEW B, 2012, 85 (16)

[2] Single-layer MoS2 nanopores as nanopower generators [J].

Feng, Jiandong ;

Graf, Michael ;

Liu, Ke ;

Ovchinnikov, Dmitry ;

Dumcenco, Dumitru ;

Heiranian, Mohammad ;

Nandigana, Vishal ;

Aluru, Narayana R. ;

Kis, Andras ;

Radenovic, Aleksandra .

NATURE, 2016, 536 (7615) :197-+

[3] Layer-controlled CVD growth of large-area two-dimensional MoS2 films [J].

Jeon, Jaeho ;

Jang, Sung Kyu ;

Jeon, Su Min ;

Yoo, Gwangwe ;

Jang, Yun Hee ;

Park, Jin-Hong ;

Lee, Sungjoo .

NANOSCALE, 2015, 7 (05) :1688-1695

[4] Theory of exciton-polariton lasing at room temperature in ZnO microcavities [J].

Johne, R. ;

Solnyshkov, D. D. ;

Malpuech, G. .

APPLIED PHYSICS LETTERS, 2008, 93 (21)

[5] Hysteresis in Single-Layer MoS2 Field Effect Transistors [J].

Late, Dattatray J. ;

Liu, Bin ;

Matte, H. S. S. Ramakrishna ;

Dravid, Vinayak P. ;

Rao, C. N. R. .

ACS NANO, 2012, 6 (06) :5635-5641

[6] Electric-field-induced strong enhancement of electroluminescence in multilayer molybdenum disulfide [J].

Li, Dehui ;

Cheng, Rui ;

Zhou, Hailong ;

Wang, Chen ;

Yin, Anxiang ;

Chen, Yu ;

Weiss, Nathan O. ;

Huang, Yu ;

Duan, Xiangfeng .

NATURE COMMUNICATIONS, 2015, 6

[7]

Li H, 2016, NAT MATER, V15, P48, DOI [10.1038/NMAT4465, 10.1038/nmat4465]

[8] From Bulk to Monolayer MoS2: Evolution of Raman Scattering [J].

Li, Hong ;

Zhang, Qing ;

Yap, Chin Chong Ray ;

Tay, Beng Kang ;

Edwin, Teo Hang Tong ;

Olivier, Aurelien ;

Baillargeat, Dominique .

ADVANCED FUNCTIONAL MATERIALS, 2012, 22 (07) :1385-1390

[9] Abnormal high-temperature luminescence enhancement observed in monolayer MoS2 flakes: thereto-driven transition from negatively charged trions to neutral excitons [J].

Li, Yuanzheng ;

Liu, Weizhen ;

Xu, Haiyang ;

Zhang, Cen ;

Yang, Liu ;

Yue, Weisheng ;

Liu, Yichun .

JOURNAL OF MATERIALS CHEMISTRY C, 2016, 4 (39) :9187-9196

[10] Graphene Quantum Dots Doping of MoS2 Monolayers [J].

Li, Ziwei ;

Ye, Ruquan ;

Feng, Rui ;

Kang, Yimin ;

Zhu, Xing ;

Tour, James M. ;

Fang, Zheyu .

ADVANCED MATERIALS, 2015, 27 (35) :5235-5240

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