Rigorous modal analysis of silicon strip nanoscale waveguides

被引：20

作者：

Leung, D. M. H. ^{[1
]}

Kejalakshmy, N. ^{[1
]}

Rahman, B. M. A. ^{[1
]}

Grattan, K. T. V. ^{[1
]}

机构：

[1] City Univ London, Sch Engn & Math Sci, London EC1V 0HB, England

来源：

OPTICS EXPRESS | 2010年 / 18卷 / 08期

关键词：

D O I：

10.1364/OE.18.008528

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

A full-vectorial H-field Finite Element Method has been used for the rigorous modal analysis of silicon strip waveguides. The spatial variation of the full-vectorial H and E-fields are also discussed in details and further, the Poynting vector is also presented. The modal area, hybridness, single mode operation and birefringence are also described for such silicon strip waveguides. (C) 2010 Optical Society of America

引用

页码：8528 / 8539

页数：12

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