Advancements in HgCdTeVLWIR materials

被引:13
作者
Gilmore, AS [1 ]
Bangs, J [1 ]
Gerrish, A [1 ]
Stevens, A [1 ]
Starr, B [1 ]
机构
[1] Raytheon Vis Syst, Goleta, CA 93117 USA
来源
Infrared Technology and Applications XXXI, Pts 1 and 2 | 2005年 / 5783卷
关键词
HgCdTe; VLWIR;
D O I
10.1117/12.607604
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Raytheon Vision Systems has achieved significant improvements in VLWIR (very long wavelength infrared) detector materials. These small bandgap detector materials are susceptible to tunneling of carriers across the bandgap via either band-to-band or trap-assisted tunneling phenomena. RVS' new procedures reduce exposure of the highly sensitive p-n junction to possible contamination sources during growth and processing. This reduction in impurities reduces the tunneling component of the detector current and yields high quality detectors out to the VLWIR range. Evidence of a highly uniform detector fabrication process is detailed within spanning the LWIR to VLWIR wavelength range.
引用
收藏
页码:223 / 230
页数:8
相关论文
共 14 条
[1]   EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J].
CHYNOWETH, A ;
LOGAN, RA ;
FELDMANN, WL .
PHYSICAL REVIEW, 1961, 121 (03) :684-&
[2]   INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J].
CHYNOWETH, AG ;
FELDMANN, WL ;
LEE, CA ;
LOGAN, RA ;
PEARSON, GL ;
AIGRAIN, P .
PHYSICAL REVIEW, 1960, 118 (02) :425-434
[3]   DARK CURRENT GENERATION MECHANISMS AND SPECTRAL NOISE CURRENT IN LONG-WAVELENGTH INFRARED PHOTODIODES [J].
DEWAMES, RE ;
PASKO, JG ;
YAO, ES ;
VANDERWYCK, AHB ;
WILLIAMS, GM .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04) :2655-2663
[4]   I-V modeling of current limiting mechanisms in HgCdTe FPA detectors [J].
Gilmore, AS ;
Bangs, J ;
Gerrish, A .
INFRARED SYSTEMS AND PHOTELECTRONIC TECHNOLOGY, 2004, 5563 :46-54
[5]  
GILMORE AS, 2004, P 2 6 WORKSH CHIC
[6]   CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE [J].
HANSEN, GL ;
SCHMIT, JL .
JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) :1639-1640
[7]  
Kinch M. A., 1981, SEMICONDUCT SEMIMET, V18
[8]   TUNNELING AND 1/F NOISE CURRENTS IN HGCDTE PHOTODIODES [J].
NEMIROVSKY, Y ;
UNIKOVSKY, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04) :1602-1610
[9]   TRAPPING EFFECTS IN HGCDTE [J].
NEMIROVSKY, Y ;
FASTOW, R ;
MEYASSED, M ;
UNIKOVSKY, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03) :1829-1839
[10]   TUNNELING AND DARK CURRENTS IN HGCDTE PHOTODIODES [J].
NEMIROVSKY, Y ;
ROSENFELD, D ;
ADAR, R ;
KORNFELD, A .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02) :528-535