共 14 条
- [1] EXCESS TUNNEL CURRENT IN SILICON ESAKI JUNCTIONS [J]. PHYSICAL REVIEW, 1961, 121 (03): : 684 - &
- [2] INTERNAL FIELD EMISSION AT NARROW SILICON AND GERMANIUM P-N JUNCTIONS [J]. PHYSICAL REVIEW, 1960, 118 (02): : 425 - 434
- [3] DARK CURRENT GENERATION MECHANISMS AND SPECTRAL NOISE CURRENT IN LONG-WAVELENGTH INFRARED PHOTODIODES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 1988, 6 (04): : 2655 - 2663
- [4] I-V modeling of current limiting mechanisms in HgCdTe FPA detectors [J]. INFRARED SYSTEMS AND PHOTELECTRONIC TECHNOLOGY, 2004, 5563 : 46 - 54
- [5] GILMORE AS, 2004, P 2 6 WORKSH CHIC
- [6] CALCULATION OF INTRINSIC CARRIER CONCENTRATION IN HG1-XCDXTE [J]. JOURNAL OF APPLIED PHYSICS, 1983, 54 (03) : 1639 - 1640
- [7] Kinch M. A., 1981, SEMICONDUCT SEMIMET, V18
- [8] TUNNELING AND 1/F NOISE CURRENTS IN HGCDTE PHOTODIODES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1992, 10 (04): : 1602 - 1610
- [9] TRAPPING EFFECTS IN HGCDTE [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (03): : 1829 - 1839
- [10] TUNNELING AND DARK CURRENTS IN HGCDTE PHOTODIODES [J]. JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A-VACUUM SURFACES AND FILMS, 1989, 7 (02): : 528 - 535