Reverse Electrical Characteristics of 4H-SiC JBS Diodes Fabricated on Substrate with Low Threading Dislocation Density

被引：12

作者：

Fujiwara, H. ^{[1
]}

Konishi, M. ^{[1
]}

Ohnishi, T. ^{[1
]}

Nakamura, T. ^{[1
]}

Hamada, K. ^{[1
]}

Katsuno, T. ^{[2
]}

Watanabe, Y. ^{[2
]}

Endo, T. ^{[3
]}

Yamamoto, T. ^{[3
]}

Tsuruta, K. ^{[3
]}

Onda, S. ^{[3
]}

机构：

[1] Toyota Motor Co Ltd, 543 Kirigahora,Nishihirose Cho, Toyota, Aichi, Japan

[2] Toyota Central R&D Labs, Aichi, Japan

[3] DENSO CORP, Res Lab, Nisshin, Aichi, Japan

来源：

SILICON CARBIDE AND RELATED MATERIALS 2010 | 2011年 / 679-680卷

关键词：

Junction Barrier Schottky Diode; Threading Dislocation; Crystal Defect; Large Current;

D O I：

10.4028/www.scientific.net/MSF.679-680.694

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The impacts of threading dislocations, surface defects, donor concentration, and Schottky barrier height on the reverse IV characteristic of silicon carbide (SiC) junction barrier Schottky (JBS) diodes were investigated. 100 A JBS diodes were fabricated on 4H-SiC 3-inch N-type wafers with two types of threading dislocation density. The typical densities were 0.2x10(4) and 3.8x10(4) cm(-2), respectively. It was found that variations in leakage current and yield of large area JBS diodes were improved using a wafer with a low threading dislocation density. In the range of low leakage current, the investigation showed a correlation between leakage current and threading dislocation density.

引用

页码：694 / +

页数：2

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