Spatially separated Mn and Be doping for high hole concentration in GaMnAs by using MEE

被引：11
作者：
Onomitsu, K
Fukui, H
Maeda, T
Hirayama, Y
Horikoshi, Y
机构：
[1] Waseda Univ, Sch Sci & Engn, Shinjuku Ku, Tokyo 1698555, Japan
[2] Waseda Univ, Kagami Mem Lab Mat Sci & Technol, Shinjuku Ku, Tokyo 1690051, Japan
[3] NTT Basic Res Lab, Atsugi, Kanagawa 2430198, Japan
来源：
JOURNAL OF CRYSTAL GROWTH | 2005年 / 278卷 / 1-4期
关键词：
doping; migration enhanced epitaxy; molecular beam epitaxy; magnetic materials; semiconducting III-V materials;
D O I：
10.1016/j.jcrysgro.2004.12.095
中图分类号：
O7 [晶体学];
学科分类号：
0702 ; 070205 ; 0703 ; 080501 ;
摘要：
The spatially separated doping of Mn and Be in GaAs is successfully performed to increase the total hole concentration and thus to improve the ferromagnetic transition temperature without creating undesirable complex defects. All the layers are grown with low-temperature migration-enhanced epitaxy. The layer structure composed of delta-doped Be and Mn layers separated by 3-monolayer undoped GaAs is found to be useful to increase the hole concentration without creating Mn-Be complex defects. The Mn-Be spatially separated doping samples show considerably improved hole concentration and other electrical transport characteristics compared with those grown by simultaneous Mn-Be co-doping. They also show much better magnetization characteristics than those with only Mn delta-doped samples, indicating that the holes supplied from the spatially separated Be-doped layers are effective to improve the magnetic properties of GaMnAs. (c) 2004 Published by Elsevier B.V.
引用
收藏
页码：699 / 703
页数：5
相关论文
共 14 条
[1]   Effect of low-temperature annealing on (Ga,Mn)As trilayer structures [J].
Chiba, D ;
Takamura, K ;
Matsukura, F ;
Ohno, H .
APPLIED PHYSICS LETTERS, 2003, 82 (18) :3020-3022
[2]   Zener model description of ferromagnetism in zinc-blende magnetic semiconductors [J].
Dietl, T ;
Ohno, H ;
Matsukura, F ;
Cibert, J ;
Ferrand, D .
SCIENCE, 2000, 287 (5455) :1019-1022
[3]   High-Curie-temperature Ga1-xMnxAs obtained by resistance-monitored annealing [J].
Edmonds, KW ;
Wang, KY ;
Campion, RP ;
Neumann, AC ;
Farley, NRS ;
Gallagher, BL ;
Foxon, CT .
APPLIED PHYSICS LETTERS, 2002, 81 (26) :4991-4993
[4]   Effect of low-temperature annealing on transport and magnetism of diluted magnetic semiconductor (Ga, Mn)As [J].
Hayashi, T ;
Hashimoto, Y ;
Katsumoto, S ;
Iye, Y .
APPLIED PHYSICS LETTERS, 2001, 78 (12) :1691-1693
[5]  
KORZHAVYI PA, 2002, PHYS REV LETT, V88, P6202
[6]   Highly enhanced Curie temperature in low-temperature annealed [Ga,Mn]As epilayers [J].
Ku, KC ;
Potashnik, SJ ;
Wang, RF ;
Chun, SH ;
Schiffer, P ;
Samarth, N ;
Seong, MJ ;
Mascarenhas, A ;
Johnston-Halperin, E ;
Myers, RC ;
Gossard, AC ;
Awschalom, DD .
APPLIED PHYSICS LETTERS, 2003, 82 (14) :2302-2304
[7]   Electronic states in Ga1-xMnxAs:: Substitutional versus interstitial position of Mn -: art. no. 235209 [J].
Máca, F ;
Masek, J .
PHYSICAL REVIEW B, 2002, 65 (23) :1-6
[8]   Ferromagnetism in Mn-doped GaAs due to substitutional-interstitial complexes [J].
Mahadevan, P ;
Zunger, A .
PHYSICAL REVIEW B, 2003, 68 (07)
[9]   Mn and Be codoped GaAs for high hole concentration by low-temperature migration-enhanced epitaxy [J].
Onomitsu, K ;
Fukui, H ;
Maeda, T ;
Hirayama, Y ;
Horikoshi, Y .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2004, 22 (04) :1746-1749
[10]   Magnetic and transport properties of III-V based magnetic semiconductor (GaMn)As: Growth condition dependence [J].
Shimizu, H ;
Hayashi, T ;
Nishinaga, T ;
Tanaka, M .
APPLIED PHYSICS LETTERS, 1999, 74 (03) :398-400
12