Local structure study of dilute Er in III-V semiconductors by fluorescence EXAFS

被引：12

作者：

Ofuchi, H ^{[1
]}

Kawamura, D ^{[1
]}

Tsuchiya, J ^{[1
]}

Matsubara, N ^{[1
]}

Tabuchi, M ^{[1
]}

Fujiwara, Y ^{[1
]}

Takeda, Y ^{[1
]}

机构：

[1] Nagoya Univ, Grad Sch Engn, Dept Mat Sci & Engn, Chikusa Ku, Nagoya, Aichi 4648603, Japan

来源：

JOURNAL OF SYNCHROTRON RADIATION | 1998年 / 5卷

关键词：

local structure; dilute; erbium; InP; OMVPE; EXAFS;

D O I：

10.1107/S0909049597018566

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

For understanding the luminescence of Er atoms in III-V semiconductors, OMVPE-grown InP doped with Er has been investigated by fluorescence EXAFS (extended X-ray absorption fine structure) in order to study the local structure around Er atoms. The local structures around the Er atoms doped in InP, with doping as dilute as 3 x 10(12) Er atoms in a 1.5 mm x 1.0 mm spot, were successfully measured by fluorescence EXAFS. The EXAFS analysis revealed that the Er atoms doped in InP above 853 K (which showed low luminescence) formed the rock-salt-structure ErP, while the Er atoms doped in InP below 823 K (which showed high luminescence) substituted on the In site of InP. The dependence of the local structure on growth temperature was observed for the samples doped with 3 x 10(12) atoms and 1.2 x 10(13) atoms of Er.

引用

页码：1061 / 1063

页数：3

共 10 条

[1] DRASTIC EFFECTS OF HYDROGEN FLOW-RATE ON GROWTH-CHARACTERISTICS AND ELECTRICAL OPTICAL-PROPERTIES OF INP GROWN BY ORGANOMETALLIC VAPOR-PHASE EPITAXY WITH TMIN AND TBP [J].

FUJIWARA, Y ;

FURUTA, S ;

MAKITA, K ;

ITO, Y ;

NONOGAKI, Y ;

TAKEDA, Y .

JOURNAL OF CRYSTAL GROWTH, 1995, 146 (1-4) :544-548

[2] Effects of growth temperature on Er-related photoluminescence in Er-doped InP and GaAs grown by organometallic vapor phase epitaxy with tertiarybutylphosphine and tertiarybutylarsine [J].

Fujiwara, Y ;

Matsubara, N ;

Tsuchiya, J ;

Ito, T ;

Takeda, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1997, 36 (5A) :2587-2591

[3] EPITAXIAL-GROWTH OF METALLIC ERP, ERSB AND LATTICE-MATCHED ERPXSB(1-X) LAYERS ON (001)INP AND (001)GAAS [J].

GUIVARCH, A ;

CAULET, J ;

LECORRE, A .

ELECTRONICS LETTERS, 1989, 25 (16) :1050-1052

[4] EXTENDED X-RAY ABSORPTION FINE-STRUCTURE - ITS STRENGTHS AND LIMITATIONS AS A STRUCTURAL TOOL [J].

LEE, PA ;

CITRIN, PH ;

EISENBERGER, P ;

KINCAID, BM .

REVIEWS OF MODERN PHYSICS, 1981, 53 (04) :769-806

[5]

OFUCHI H, 1998, IN PRESS MICROELECTR

[6] GROWTH AND STRUCTURAL CHARACTERIZATION OF MOLECULAR-BEAM EPITAXIAL ERBIUM-DOPED GAAS [J].

POOLE, I ;

SINGER, KE ;

PEAKER, AR ;

WRIGHT, AC .

JOURNAL OF CRYSTAL GROWTH, 1992, 121 (1-2) :121-131

[7] THEORETICAL X-RAY ABSORPTION FINE-STRUCTURE STANDARDS [J].

REHR, JJ ;

DELEON, JM ;

ZABINSKY, SI ;

ALBERS, RC .

JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 1991, 113 (14) :5135-5140

[8] Exafs and X-ray CTR scattering characterization of Er doped in InP by OMVPE [J].

Tabuchi, M ;

Kawamura, D ;

Fujita, K ;

Matsubara, N ;

Yamada, N ;

Ofuchi, H ;

Ichiki, S ;

Fujiwara, Y ;

Takeda, Y .

RARE EARTH DOPED SEMICONDUCTORS II, 1996, 422 :155-160

[9] ATOMIC CONFIGURATION OF THE ER-O LUMINESCENCE CENTER IN ER-DOPED GAAS WITH OXYGEN CODOPING [J].

TAKAHEI, K ;

TAGUCHI, A ;

HORIKOSHI, Y ;

NAKATA, J .

JOURNAL OF APPLIED PHYSICS, 1994, 76 (07) :4332-4339

[10] PHOTOLUMINESCENT PROPERTIES OF ER-DOPED GAP DEPOSITED ON SI [J].

WANG, XZ ;

WESSELS, BW .

APPLIED PHYSICS LETTERS, 1995, 67 (04) :518-520

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