(AlGa)As composition profile analysis of trenches overgrown with MOVPE

被引:4
作者
Hofmann, L
Rudloff, D
Rechenberg, I
Knauer, A
Christen, J
Weyers, M
机构
[1] Ferdinand Braun Inst Hochstfrequenztech, D-12489 Berlin, Germany
[2] Otto Von Guericke Univ, D-39016 Magdeburg, Germany
关键词
MOVPE; patterned growth; (AlGa)As; composition profile; surface diffusion;
D O I
10.1016/S0022-0248(00)00949-0
中图分类号
O7 [晶体学];
学科分类号
0702 ; 070205 ; 0703 ; 080501 ;
摘要
In this paper we present an examination of (Al0.3Ga0.7)As layers grown by MOVPE at different temperatures over trenches etched into (100) GaAs in [0 1 1] direction. On the sidewalls of the trenches, the Al content is reduced compared to planar regions. High-resolution cathodoluminescence (CL) shows that the region with lower Al content is homogeneous along the sidewalls and that the Al content changes abruptly at the change of growth facets, To get information on the growth mechanism GaAs quantum wells are embedded within the (AlGa)As, Their CL emission wavelength is different for the sidewalls and planar regions indicating different thicknesses and thus growth rates. The GaAs growth rates are compared with the (AlGa)As growth rates and the change in Al content on the sidewalls, The results lead to a contradiction, Therefore, the growth of (AlGa)As over trenches cannot be treated as the sum of its binary components. (C) 2001 Published by Elsevier Science B.V.
引用
收藏
页码:465 / 470
页数:6
相关论文
共 8 条
[1]   SCANNING CATHODOLUMINESCENCE MICROSCOPY - A UNIQUE APPROACH TO ATOMIC-SCALE CHARACTERIZATION OF HETEROINTERFACES AND IMAGING OF SEMICONDUCTOR INHOMOGENEITIES [J].
CHRISTEN, J ;
GRUNDMANN, M ;
BIMBERG, D .
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1991, 9 (04) :2358-2368
[2]   Patterned growth of (AlGa)As using metalorganic vapor-phase epitaxy [J].
Hofmann, L ;
Knauer, A ;
Rechenberg, I ;
Weyers, M ;
Stolz, W .
JOURNAL OF CRYSTAL GROWTH, 1999, 206 (04) :255-262
[3]   Overgrowth of trenches with (AlGa)As using metalorganic vapor-phase epitaxy (MOVPE) [J].
Hofmann, L ;
Knauer, A ;
Rechenberg, I ;
Weyers, M .
JOURNAL OF CRYSTAL GROWTH, 1998, 195 (1-4) :485-489
[4]   Comparison of binary and ternary growth over trenches using MOVPE [J].
Hofmann, L ;
Knauer, A ;
Rechenberg, I ;
Zeimer, U ;
Weyers, M .
JOURNAL OF CRYSTAL GROWTH, 2000, 213 (3-4) :229-234
[5]   600 MW CW SINGLE-MODE GAALAS TRIPLE-QUANTUM-WELL LASER WITH A NEW INDEX-GUIDED STRUCTURE [J].
IMAFUJI, O ;
TAKAYAMA, T ;
SUGIURA, H ;
YURI, M ;
NAITO, H ;
KUME, M ;
ITOH, K .
IEEE JOURNAL OF QUANTUM ELECTRONICS, 1993, 29 (06) :1889-1894
[6]   THE FACET EVOLUTION DURING METALORGANIC VAPOR-PHASE EPITAXIAL-GROWTH ON V-GROOVED HIGH MILLER INDEX GAAS SUBSTRATES [J].
KIM, MS ;
KIM, Y ;
LEE, MS ;
PARK, YJ ;
KIM, SI ;
MIN, SK .
JOURNAL OF CRYSTAL GROWTH, 1994, 139 (3-4) :231-237
[7]   COMPOSITION PROFILE OF AN ALGAAS EPILAYER ON A V-GROOVED SUBSTRATE GROWN BY LOW-PRESSURE METALORGANIC VAPOR-PHASE EPITAXY [J].
PAN, WG ;
YAGUCHI, H ;
ONABE, K ;
ITO, R ;
SHIRAKI, Y .
APPLIED PHYSICS LETTERS, 1995, 67 (07) :959-961
[8]  
Sebastian J, 1997, P IEEE LEOS 97, V2, P488, DOI [10.1109/LEOS.1997.645532, DOI 10.1109/LEOS.1997.645532]