Broadband superluminescent diodes with height-engineered InAs-GaAs quantum dots

被引：15

作者：

Haffouz, S. ^{[1
]}

Rodermans, M. ^{[1
]}

Barrios, P. J. ^{[1
]}

Lapointe, J. ^{[1
]}

Raymond, S. ^{[1
]}

Lu, Z. ^{[1
]}

Poitras, D. ^{[1
]}

机构：

[1] Natl Res Council Canada, Inst Microstruct Sci, Ottawa, ON, Canada

来源：

ELECTRONICS LETTERS | 2010年 / 46卷 / 16期

关键词：

BANDWIDTH;

D O I：

10.1049/el.2010.0508

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ultra-wide bandwidth superluminescent diodes (SLDs) using multiple layers of InAs-GaAs quantum dots (QDs) with engineered height are realised. A tilted and tapered active region is used to reduce the effective reflectivity from the facets. A 3 dB emission bandwidth up to 140 nm centred at 1100 nm is achieved at a continuous-wave drive-current of 600 mA. It is shown that varying the height of the dots from one layer of dots to another within the active region considerably broadens the emission spectrum of the QD-SLDs compared to those made of similar layers of inhomogeneous QDs.

引用

页码：1144 / 1145

页数：2

共 10 条

[1] Growth and fabrication of quantum dots superluminescent diodes using the indium-flush technique: A new approach in controlling the bandwidth [J].

Haffouz, S. ;

Raymond, S. ;

Lu, Z. G. ;

Barrios, P. J. ;

Roy-Guay, D. ;

Wu, X. ;

Liu, J. R. ;

Poitras, D. ;

Wasilewski, Z. R. .

JOURNAL OF CRYSTAL GROWTH, 2009, 311 (07) :1803-1806

[2] Wide emission spectrum from superluminescent diodes with chirped quantum dot multilayers [J].

Li, LH ;

Rossetti, M ;

Fiore, A ;

Occhi, L ;

Velez, C .

ELECTRONICS LETTERS, 2005, 41 (01) :41-43

[3] InAs/GaAs quantum-dot superluminescent diodes with 110 nm bandwidth [J].

Liu, N ;

Jin, P ;

Wang, ZG .

ELECTRONICS LETTERS, 2005, 41 (25) :1400-1402

[4] Broadband Emitting Superluminescent Diodes With InAs Quantum Dots in AlGaAs Matrix [J].

Lv, X. Q. ;

Liu, N. ;

Jin, P. ;

Wang, Z. G. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2008, 20 (17-20) :1742-1744

[5] High power tapered superluminescent diodes using novel etched deflectors [J].

Middlemast, I ;

Sarma, J ;

Yunus, S .

ELECTRONICS LETTERS, 1997, 33 (10) :903-904

[6]

POVAZAY B, 2007, J BIOMED OPT, V12

[7] Broad-band superluminescent light-emitting diodes incorporating quantum dots in compositionally modulated quantum wells [J].

Ray, SK ;

Groom, KM ;

Beattie, MD ;

Liu, HY ;

Hopkinson, M ;

Hogg, RA .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2006, 18 (1-4) :58-60

[8] 1.3-μm quantum-dot multisection superluminescent diodes with extremely broad bandwidth [J].

Xin, Y-C. ;

Martinez, A. ;

Saiz, T. ;

Moscho, A. J. ;

Li, Y. ;

Nilsen, T. A. ;

Gray, A. L. ;

Lester, L. F. .

IEEE PHOTONICS TECHNOLOGY LETTERS, 2007, 19 (5-8) :501-503

[9] High power GaInAsP/InP strained quantum well superluminescent diode with tapered active region [J].

Yamatoya, T ;

Mori, S ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1999, 38 (9A) :5121-5122

[10] High power broadband superluminescent diodes with chirped multiple quantum dots [J].

Yoo, Y. C. ;

Han, I. K. ;

Lee, J. I. .

ELECTRONICS LETTERS, 2007, 43 (19) :1045-1047

← 1 →