Computer simulation of micro- and nano- structures at electron and ion lithography

In this paper a review concerning the main steps of a complete mathematical model for the simulation of the exposure and development process in electron and ion beam lithography is presented. Our own Monte Carlo simulation tools for electron and ion beam lithographies are applied to the calculation of the energy deposition and the resist-developed profiles of sub-quarter-micron patterns. An example of the pattern deformation due to proximity effects and application of the latent image calculation for the proximity effects correction is also shown. The presented results and comparisons show that the models are adequate and have a very good potential for application in the case of multilayer sub-quarter-micron patterns.